Investigation on surface-plasmon-enhanced light emission of InGaN/GaN multiple quantum wells

2018 ◽  
Vol 117 ◽  
pp. 200-206 ◽  
Author(s):  
Zhenzhong Yu ◽  
Qiang Li ◽  
Qigao Fan ◽  
Yixin Zhu
Keyword(s):  
Quantum Wells ◽  
Surface Plasmon ◽  
Light Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Enhanced light emission from AlGaN/GaN multiple quantum wells using the localized surface plasmon effect by aluminum nanoring patterns

2017 ◽  
Vol 6 (1) ◽  
pp. 30 ◽  
Author(s):  
Kyung Rock Son ◽  
Byeong Ryong Lee ◽  
Min Ho Jang ◽  
Hyun Chul Park ◽  
Yong Hoon Cho ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Surface Plasmon ◽  
Light Emission ◽  
Multiple Quantum Wells ◽  
Localized Surface Plasmon ◽  
Multiple Quantum ◽  
Plasmon Effect

Electrical-Pumped Active Plasmonic with InP-Based Quantum Wells

2011 ◽  
Vol 415-417 ◽  
pp. 537-540
Author(s):  
Te Li ◽  
Er Juan Hao
Keyword(s):  
Quantum Wells ◽  
Surface Plasmon ◽  
Surface Plasmon Polaritons ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Forward Voltage ◽  
Loss Compensation ◽  
Plasmon Polaritons

The InP-based wafers with InGaAsP multiple Quantum Wells (QWs) were designed for the loss compensation of surface plasmon polaritons (SPPs). Electrical-pumped device was fabricated by conventional III-V processes and e-Beam lithography (EBL) technology. When forward voltage is added on the device, it is observed that the gain of the quantum wells at 1.55μm assist the propagation of SPPs.

Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells

2014 ◽  
Vol 2 (5) ◽  
pp. 451-458 ◽  
Author(s):  
Jun Yin ◽  
Yang Li ◽  
Shengchang Chen ◽  
Jing Li ◽  
Junyong Kang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Surface Plasmon ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Exciton Emission ◽  
Deep Uv

InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate

2011 ◽  
Vol 679-680 ◽  
pp. 801-803
Author(s):  
Ji Sheng Han ◽  
Sima Dimitrjiev ◽  
Li Wang ◽  
Alan Iacopi ◽  
Qu Shuang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Light Emission ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Structural Quality ◽  
Multiple Quantum ◽  
Si Substrate ◽  
Si Substrates

Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.

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