Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells

2014 ◽  
Vol 2 (5) ◽  
pp. 451-458 ◽  
Author(s):  
Jun Yin ◽  
Yang Li ◽  
Shengchang Chen ◽  
Jing Li ◽  
Junyong Kang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Surface Plasmon ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Exciton Emission ◽  
Deep Uv

AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications

2019 ◽  
Vol 25 (8) ◽  
pp. 837-844 ◽  
Author(s):  
Anne Henry ◽  
Anders Lundskog ◽  
Justinas Palisaitis ◽  
Ivan Ivanov ◽  
Anelia Kakanakova-Georgieva ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Deep Uv

Electrical-Pumped Active Plasmonic with InP-Based Quantum Wells

2011 ◽  
Vol 415-417 ◽  
pp. 537-540
Author(s):  
Te Li ◽  
Er Juan Hao
Keyword(s):  
Quantum Wells ◽  
Surface Plasmon ◽  
Surface Plasmon Polaritons ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Forward Voltage ◽  
Loss Compensation ◽  
Plasmon Polaritons

The InP-based wafers with InGaAsP multiple Quantum Wells (QWs) were designed for the loss compensation of surface plasmon polaritons (SPPs). Electrical-pumped device was fabricated by conventional III-V processes and e-Beam lithography (EBL) technology. When forward voltage is added on the device, it is observed that the gain of the quantum wells at 1.55μm assist the propagation of SPPs.

scholarly journals Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Dengkui Wang ◽  
Xian Gao ◽  
Jilong Tang ◽  
Xuan Fang ◽  
Dan Fang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Blue Shift ◽  
Multiple Quantum Wells ◽  
Emission Characteristics ◽  
Multiple Quantum ◽  
Interfacial Diffusion ◽  
Exciton Emission

AbstractRapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.

Enhanced light emission from AlGaN/GaN multiple quantum wells using the localized surface plasmon effect by aluminum nanoring patterns

2017 ◽  
Vol 6 (1) ◽  
pp. 30 ◽  
Author(s):  
Kyung Rock Son ◽  
Byeong Ryong Lee ◽  
Min Ho Jang ◽  
Hyun Chul Park ◽  
Yong Hoon Cho ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Surface Plasmon ◽  
Light Emission ◽  
Multiple Quantum Wells ◽  
Localized Surface Plasmon ◽  
Multiple Quantum ◽  
Plasmon Effect
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