Evaluating the quantum confinement effect of isolated ZnO nanorod single-quantum-well structures using near-field ultraviolet photoluminescence spectroscopy

2005 ◽  
Author(s):  
T. Yatsui ◽  
J. Lim ◽  
T. Kawazoe ◽  
M. Ohtsu ◽  
S.J. An ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Near Field ◽  
Photoluminescence Spectroscopy ◽  
Confinement Effect ◽  
Zno Nanorod ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

Near-field photoluminescence study in violet light emitting InGaN single quantum well structures

2005 ◽  
Vol 2 (7) ◽  
pp. 2728-2731 ◽  
Author(s):  
Akio Kaneta ◽  
Daisuke Yamada ◽  
Giichi Marutsuki ◽  
Yukio Narukawa ◽  
Takashi Mukai ◽  
...  
Keyword(s):  
Quantum Well ◽  
Near Field ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Quantum Well Structures ◽  
Photoluminescence Study ◽  
Violet Light

Resonant Photoluminescence Spectroscopy of InGaN/GaN Single Quantum Well Structures

2007 ◽  
Author(s):  
D. M. Graham ◽  
P. Dawson ◽  
M. J. Godfrey ◽  
M. J. Kappers ◽  
C. J. Humphreys
Keyword(s):  
Quantum Well ◽  
Photoluminescence Spectroscopy ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

Optical properties of GaBiAs single quantum well structures grown by MBE

2015 ◽  
Vol 30 (9) ◽  
pp. 094016 ◽  
Author(s):  
O Donmez ◽  
A Erol ◽  
M C Arikan ◽  
H Makhloufi ◽  
A Arnoult ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

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