Near-field photoluminescence study in violet light emitting InGaN single quantum well structures

2005 ◽  
Vol 2 (7) ◽  
pp. 2728-2731 ◽  
Author(s):  
Akio Kaneta ◽  
Daisuke Yamada ◽  
Giichi Marutsuki ◽  
Yukio Narukawa ◽  
Takashi Mukai ◽  
...  
1995 ◽  
Vol 395 ◽  
Author(s):  
Shuji Nakamura

ABSTRACTInGaN single-quantum-well-structure (SQW) light-emitting diodes (LEDs) with an emission wavelength between violet and orange were fabricated. The maximum on-axis luminous intensity of green LEDs was 12 cd and the external quantum efficiency was as high as 6.3 % at a forward current of 20 mA, while those of blue LEDs were 2 cd and 9.1 %, respectively. The peak wavelength and the full width at half-maximum of the green LEDs were 520 nm and 30 nm, respectively, while those of blue LEDs were 450 nm and 20 nm, respectively. The color of green InGaN SQW LEDs was greener than those of conventional GaP and AlInGaP LEDs.


1995 ◽  
Vol 67 (13) ◽  
pp. 1868-1870 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Naruhito Iwasa ◽  
Shin‐ichi Nagahama

2015 ◽  
Vol 30 (9) ◽  
pp. 094016 ◽  
Author(s):  
O Donmez ◽  
A Erol ◽  
M C Arikan ◽  
H Makhloufi ◽  
A Arnoult ◽  
...  

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.


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