Indium concentration influence on PL spatial inhomogeneity in InGaN single quantum well structures detected by original low-cost near-field probes

2004 ◽  
Vol 229 (1-4) ◽  
pp. 338-345 ◽  
Author(s):  
Ruggero Micheletto ◽  
Nobuki Yoshimatsu ◽  
Akio Kaneta ◽  
Yoichi Kawakami ◽  
Shigeo Fujita
Keyword(s):  
Quantum Well ◽  
Low Cost ◽  
Near Field ◽  
Spatial Inhomogeneity ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Indium Concentration

Near-field photoluminescence study in violet light emitting InGaN single quantum well structures

2005 ◽  
Vol 2 (7) ◽  
pp. 2728-2731 ◽  
Author(s):  
Akio Kaneta ◽  
Daisuke Yamada ◽  
Giichi Marutsuki ◽  
Yukio Narukawa ◽  
Takashi Mukai ◽  
...  
Keyword(s):  
Quantum Well ◽  
Near Field ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Quantum Well Structures ◽  
Photoluminescence Study ◽  
Violet Light

Spatial Inhomogeneity of Photoluminescence in InGaN Single Quantum Well Structures

2001 ◽  
Vol 228 (1) ◽  
pp. 153-156 ◽  
Author(s):  
A. Kaneta ◽  
G. Marutsuki ◽  
K. Okamoto ◽  
Y. Kawakami ◽  
Y. Nakagawa ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spatial Inhomogeneity ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

Optical properties of GaBiAs single quantum well structures grown by MBE

2015 ◽  
Vol 30 (9) ◽  
pp. 094016 ◽  
Author(s):  
O Donmez ◽  
A Erol ◽  
M C Arikan ◽  
H Makhloufi ◽  
A Arnoult ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Insitupatterning and overgrowth for the formation of buried GaAs/AlGaAs single quantum‐well structures

1992 ◽  
Vol 60 (3) ◽  
pp. 365-367 ◽  
Author(s):  
H. Kawanishi ◽  
Y. Sugimoto ◽  
T. Ishikawa ◽  
H. Hidaka
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures
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