Monolithically integrated 650 nm and 780 nm semiconductor lasers with aluminum-free active areas

2001 ◽  
Author(s):  
Tien-chang Lu ◽  
S.C. Wang ◽  
R. Fu ◽  
H.M. Shieh ◽  
K.J. Huang
Keyword(s):  
Semiconductor Lasers ◽  
Monolithically Integrated

scholarly journals Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication

Nano Letters ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 6915-6923 ◽  
Author(s):  
Piotr J. Cegielski ◽  
Anna Lena Giesecke ◽  
Stefanie Neutzner ◽  
Caroline Porschatis ◽  
Marina Gandini ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Top Down ◽  
Monolithically Integrated ◽  
Silicon Photonic

Passive modelocking in semiconductor lasers with monolithically integrated passive waveguides

1998 ◽  
Vol 145 (1) ◽  
pp. 43-46 ◽  
Author(s):  
F. Camacho ◽  
J.H. Marsh ◽  
E.A. Avrutin ◽  
A.C. Bryce
Keyword(s):  
Semiconductor Lasers ◽  
Monolithically Integrated

scholarly journals Control of mutual phase locking of monolithically integrated semiconductor lasers

1983 ◽  
Vol 43 (5) ◽  
pp. 421-423 ◽  
Author(s):  
E. Kapon ◽  
J. Katz ◽  
C. Lindsey ◽  
S. Margalit ◽  
A. Yariv
Keyword(s):  
Semiconductor Lasers ◽  
Phase Locking ◽  
Monolithically Integrated

DISTRIBUTED FEEDBACK SEMICONDUCTOR LASERS AND THEIR APPLICATION IN PHOTONIC INTEGRATED DEVICES

1996 ◽  
Vol 07 (03) ◽  
pp. 409-428
Author(s):  
YI LUO ◽  
WEI WANG
Keyword(s):  
Semiconductor Lasers ◽  
Distributed Feedback ◽  
Device Structure ◽  
Electroabsorption Modulator ◽  
Monolithically Integrated ◽  
Integrated Devices ◽  
Dfb Laser ◽  
Integrated Device ◽  
First Time ◽  
Multi Quantum Well

Distributed feedback (DFB) semiconductor lasers, especially those with gain-coupled (GC) mechanisms, are studied. A GaAlAs/GaAs multi-quantum well GC-DFB laser with a loss grating is fabricated using MBE for the first time. A 1.3 µm InGaAsP/InP DFB laser with a loss grating and one with a gain grating formed by injected carriers are developed by LPE and MOVPE, respectively. GC-DFB lasers monolithically integrated with electroabsorption modulator is studied systematically for the first time. A novel integrated device structure is proposed and fabricated successfully.

Monolithically integrated multi-section semiconductor lasers: Towards the future of integrated microwave photonics

Optik ◽  
2021 ◽  
Vol 226 ◽  
pp. 165724
Author(s):  
Jin Li ◽  
Jilin Zheng ◽  
Tao Pu ◽  
Yunshan Zhang ◽  
Yuechun Shi ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Microwave Photonics ◽  
Monolithically Integrated ◽  
The Future
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