Passive modelocking in semiconductor lasers with monolithically integrated passive waveguides

F. Camacho; J.H. Marsh; E.A. Avrutin; A.C. Bryce

doi:10.1049/ip-opt:19981784

Passive modelocking in semiconductor lasers with monolithically integrated passive waveguides

IEE Proceedings - Optoelectronics ◽

10.1049/ip-opt:19981784 ◽

1998 ◽

Vol 145 (1) ◽

pp. 43-46 ◽

Cited By ~ 6

Author(s):

F. Camacho ◽

J.H. Marsh ◽

E.A. Avrutin ◽

A.C. Bryce

Keyword(s):

Semiconductor Lasers ◽

Monolithically Integrated

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Monolithically Integrated Semiconductor Lasers

Optical and Fiber Communications Reports - Single Frequency Semiconductor Lasers ◽

10.1007/978-981-10-5257-6_4 ◽

2017 ◽

pp. 81-115

Author(s):

Zujie Fang ◽

Haiwen Cai ◽

Gaoting Chen ◽

Ronghui Qu

Keyword(s):

Semiconductor Lasers ◽

Monolithically Integrated

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Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication

Nano Letters ◽

10.1021/acs.nanolett.8b02811 ◽

2018 ◽

Vol 18 (11) ◽

pp. 6915-6923 ◽

Cited By ~ 29

Author(s):

Piotr J. Cegielski ◽

Anna Lena Giesecke ◽

Stefanie Neutzner ◽

Caroline Porschatis ◽

Marina Gandini ◽

...

Keyword(s):

Semiconductor Lasers ◽

Top Down ◽

Monolithically Integrated ◽

Silicon Photonic

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Monolithically integrated multi-section semiconductor lasers: towards the future of integrated microwave photonic processing

Real-time Photonic Measurements, Data Management, and Processing V ◽

10.1117/12.2573341 ◽

2020 ◽

Author(s):

Jilin Zheng ◽

Jin Li ◽

Tao Pu ◽

Yunshan Zhang ◽

Yuechun Shi ◽

...

Keyword(s):

Semiconductor Lasers ◽

Monolithically Integrated ◽

Microwave Photonic ◽

The Future ◽

Photonic Processing

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High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems

10.1117/12.2212544 ◽

2016 ◽

Cited By ~ 1

Author(s):

Sergey Slipchenko ◽

Aleksandr Podoskin ◽

Olga Soboleva ◽

Maxim S. Zakharov ◽

Kirill Bakhvalov ◽

...

Keyword(s):

Semiconductor Lasers ◽

High Power ◽

High Efficiency ◽

Time Of Flight ◽

Monolithically Integrated ◽

Nanosecond Pulses

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Control of mutual phase locking of monolithically integrated semiconductor lasers

Applied Physics Letters ◽

10.1063/1.94374 ◽

1983 ◽

Vol 43 (5) ◽

pp. 421-423 ◽

Cited By ~ 18

Author(s):

E. Kapon ◽

J. Katz ◽

C. Lindsey ◽

S. Margalit ◽

A. Yariv

Keyword(s):

Semiconductor Lasers ◽

Phase Locking ◽

Monolithically Integrated

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Monolithically Integrated Polarization Mode Convertors with Semiconductor Lasers

2014 IEEE Photonics Society Summer Topical Meeting Series ◽

10.1109/sum.2014.109 ◽

2014 ◽

Author(s):

M.A. Naeem ◽

K. Abid ◽

J. Akbar ◽

B.M. Holmes ◽

A.E. Kelly ◽

...

Keyword(s):

Semiconductor Lasers ◽

Polarization Mode ◽

Monolithically Integrated

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DISTRIBUTED FEEDBACK SEMICONDUCTOR LASERS AND THEIR APPLICATION IN PHOTONIC INTEGRATED DEVICES

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156496000220 ◽

1996 ◽

Vol 07 (03) ◽

pp. 409-428

Author(s):

YI LUO ◽

WEI WANG

Keyword(s):

Semiconductor Lasers ◽

Distributed Feedback ◽

Device Structure ◽

Electroabsorption Modulator ◽

Monolithically Integrated ◽

Integrated Devices ◽

Dfb Laser ◽

Integrated Device ◽

First Time ◽

Multi Quantum Well

Distributed feedback (DFB) semiconductor lasers, especially those with gain-coupled (GC) mechanisms, are studied. A GaAlAs/GaAs multi-quantum well GC-DFB laser with a loss grating is fabricated using MBE for the first time. A 1.3 µm InGaAsP/InP DFB laser with a loss grating and one with a gain grating formed by injected carriers are developed by LPE and MOVPE, respectively. GC-DFB lasers monolithically integrated with electroabsorption modulator is studied systematically for the first time. A novel integrated device structure is proposed and fabricated successfully.

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