Monolithically Integrated Polarization Mode Convertors with Semiconductor Lasers

Author(s):  
M.A. Naeem ◽  
K. Abid ◽  
J. Akbar ◽  
B.M. Holmes ◽  
A.E. Kelly ◽  
...  
Nano Letters ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 6915-6923 ◽  
Author(s):  
Piotr J. Cegielski ◽  
Anna Lena Giesecke ◽  
Stefanie Neutzner ◽  
Caroline Porschatis ◽  
Marina Gandini ◽  
...  

1998 ◽  
Vol 145 (1) ◽  
pp. 43-46 ◽  
Author(s):  
F. Camacho ◽  
J.H. Marsh ◽  
E.A. Avrutin ◽  
A.C. Bryce

Author(s):  
M. A. Naeem ◽  
B. M. Holmes ◽  
A. E. Kelly ◽  
J. H. Marsh ◽  
D. C. Hutchings

1983 ◽  
Vol 43 (5) ◽  
pp. 421-423 ◽  
Author(s):  
E. Kapon ◽  
J. Katz ◽  
C. Lindsey ◽  
S. Margalit ◽  
A. Yariv

1996 ◽  
Vol 07 (03) ◽  
pp. 409-428
Author(s):  
YI LUO ◽  
WEI WANG

Distributed feedback (DFB) semiconductor lasers, especially those with gain-coupled (GC) mechanisms, are studied. A GaAlAs/GaAs multi-quantum well GC-DFB laser with a loss grating is fabricated using MBE for the first time. A 1.3 µm InGaAsP/InP DFB laser with a loss grating and one with a gain grating formed by injected carriers are developed by LPE and MOVPE, respectively. GC-DFB lasers monolithically integrated with electroabsorption modulator is studied systematically for the first time. A novel integrated device structure is proposed and fabricated successfully.


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