Lettuce is an economically important crop that can be grown either in the field or greenhouse. Different challenges are present in either environment; therefore, cultivar selection is important. For hydroponic greenhouse lettuce there is relatively little published information on cultivar selection under different lighting sources. The objective of phase 1 was to determine the influence of lighting using high pressure sodium (HPS) or light emitting diodes (LED) on plant fresh weight, height, tip burn index, bolting, and Brix. Phase 2 was similar to phase 1 but with fewer cultivars (1) to allow for greater number of replicates per treatment per crop cycle. Each experiment consisted of three crop cycles over time per phase. Light sources were controlled using an algorithm, Light and Shade System Implementation (LASSI), to achieve a constant average daily light integral under each treatment and crop cycle. Electrical consumption and efficacy (fresh weight per kWh) from each treatment was estimated using data collected on power consumption from representative lamps multiplied by the number of fixtures and the hours fixtures were on per crop cycle. In phase 1, the fresh weight of 2 to 3 cultivars was greater under HPS and 1 to 2 cultivars under LED, depending on production cycle. The HPS-grown lettuce tended to have more tip burn and bolting in crop cycles 1 and 2, with cycle 3 showing similar tip burn incidence. Bolting was only consistently observed in one cultivar, ‘Teodore’. The LED array used less than half as much electricity as the HPS array, while producing relatively similar size lettuce, therefore, leading to electrical efficacies two- to three-times higher in LED than in HPS treatments. In phase 2, significant differences in height were found in ‘Greenstar’ and ‘Xandra’, with HPS producing larger plants than LED. Significant differences were also found in diameter in ‘Greenstar’, ‘Xandra’, ‘Locarno’, and ‘Crunchita’, with HPS again being larger than LED.
High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm