High confinement at low power input in magnetic fusion plasmas: analysis of trade-offs using stability theory

Author(s):  
Rowena Ball
2015 ◽  
Vol 91 (5) ◽  
pp. 1485-1492 ◽  
Author(s):  
Karen Gómez-Pazarín ◽  
Celia Flores ◽  
Tania Castillo ◽  
Jochen Büchs ◽  
Enrique Galindo ◽  
...  

2017 ◽  
Vol 941 ◽  
pp. 012008
Author(s):  
A B Kukushkin ◽  
A A Kulichenko ◽  
P A Sdvizhenskii ◽  
A V Sokolov ◽  
V V Voloshinov

Author(s):  
J. Rosato ◽  
H. Bufferand ◽  
M. Koubiti ◽  
Y. Marandet ◽  
R. Stamm

2006 ◽  
Vol 16 (01) ◽  
pp. 193-219 ◽  
Author(s):  
S. DELEONIBUS ◽  
B. de SALVO ◽  
T. ERNST ◽  
O. FAYNOT ◽  
T. POIROUX ◽  
...  

Innovations in electronics history have been possible because of the strong association of devices and materials research. The demand for low voltage, low power and high performance are the great challenges for engineering of sub 50nm gate length CMOS devices. Functional CMOS devices in the range of 5 nm channel length have been demonstrated. The alternative architectures allowing to increase devices drivability and reduce power are reviewed through the issues to address in gate/channel and substrate, gate dielectric as well as source and drain engineering. HiK gate dielectric and metal gate are among the most strategic options to consider for power consumption and low supply voltage management. It will be very difficult to compete with CMOS logic because of the low series resistance required to obtain high performance. By introducing new materials ( Ge , diamond/graphite Carbon, HiK, …), Si based CMOS will be scaled beyond the ITRS as the future System-on-Chip Platform integrating new disruptive devices. The association of C-diamond with HiK as a combination for new functionalized Buried Insulators, for example, will bring new ways of improving short channel effects and suppress self-heating. That will allow new optimization of Ion-Ioff trade offs. The control of low power dissipation and short channel effects together with high performance will be the major challenges in the future.


Sensors ◽  
2020 ◽  
Vol 20 (21) ◽  
pp. 6156
Author(s):  
Fernando Moreno-Cruz ◽  
Víctor Toral-López ◽  
Antonio Escobar-Molero ◽  
Víctor U. Ruíz ◽  
Almudena Rivadeneyra ◽  
...  

Although the number of Internet of Things devices increases every year, efforts to decrease hardware energy demands and to improve efficiencies of the energy-harvesting stages have reached an ultra-low power level. However, no current standard of wireless communication protocol (WCP) can fully address those scenarios. Our focus in this paper is to introduce treNch, a novel WCP implementing the cross-layer principle to use the power input for adapting its operation in a dynamic manner that goes from pure best-effort to nearly real time. Together with the energy-management algorithm, it operates with asynchronous transmissions, synchronous and optional receptions, short frame sizes and a light architecture that gives control to the nodes. These features make treNch an optimal option for wireless sensor networks with ultra-low power demands and severe energy fluctuations. We demonstrate through a comparison with different modes of Bluetooth Low Energy (BLE) a decrease of the power consumption in 1 to 2 orders of magnitude for different scenarios at equal quality of service. Moreover, we propose some security optimizations, such as shorter over-the-air counters, to reduce the packet overhead without decreasing the security level. Finally, we discuss other features aside of the energy needs, such as latency, reliability or topology, brought again against BLE.


Sign in / Sign up

Export Citation Format

Share Document