Empirical model for the distribution of electronic states associated with hydrogenated amorphous silicon

2003 ◽  
Author(s):  
S.M. Malik ◽  
S.K. O'Leary
Keyword(s):  
Amorphous Silicon ◽  
Empirical Model ◽  
Hydrogenated Amorphous Silicon ◽  
Electronic States ◽  
Hydrogenated Amorphous

Electronic states and total energies in hydrogenated amorphous silicon

1982 ◽  
Vol 25 (2) ◽  
pp. 1065-1080 ◽  
Author(s):  
Douglas C. Allan ◽  
J. D. Joannopoulos ◽  
William B. Pollard
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Electronic States ◽  
Total Energies ◽  
Hydrogenated Amorphous

PHOTO- AND DARK CURRENT NOISE IN a-Si:H PIN DIODES AT FORWARD AND REVERSE BIAS

1998 ◽  
Vol 507 ◽  
Author(s):  
F. Blecher ◽  
K. Seibel ◽  
M. Bohm
Keyword(s):  
Amorphous Silicon ◽  
Empirical Model ◽  
Dark Current ◽  
Reverse Bias ◽  
Forward Bias ◽  
Hydrogenated Amorphous Silicon ◽  
Current Noise ◽  
Pin Diodes ◽  
Hydrogenated Amorphous ◽  
Operating Points

ABSTRACTThe noise spectra of hydrogenated amorphous silicon pin diodes are measured in the dark and under illumination at reverse and forward bias. The noise coefficients of 1/f noise at different operating points are determined. The superposition of the different noise mechanisms is investigated. A new empirical model and a method to calculate the noise in pin diodes is suggested. Transport and noise mechanisms are discussed.

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