scholarly journals Membrane Selectivity versus Sensor Response in Hydrogenated Amorphous Silicon CHEMFETs Using a Semi-Empirical Model

2011 ◽  
Vol 11 (10) ◽  
pp. 8844-8847
Author(s):  
J. Costa ◽  
M. Fernandes ◽  
M. Vieira ◽  
G. Lavareda ◽  
A. Karmali
Keyword(s):  
Amorphous Silicon ◽  
Empirical Model ◽  
Hydrogenated Amorphous Silicon ◽  
Sensor Response ◽  
Membrane Selectivity ◽  
Semi Empirical ◽  
Hydrogenated Amorphous

PHOTO- AND DARK CURRENT NOISE IN a-Si:H PIN DIODES AT FORWARD AND REVERSE BIAS

1998 ◽  
Vol 507 ◽  
Author(s):  
F. Blecher ◽  
K. Seibel ◽  
M. Bohm
Keyword(s):  
Amorphous Silicon ◽  
Empirical Model ◽  
Dark Current ◽  
Reverse Bias ◽  
Forward Bias ◽  
Hydrogenated Amorphous Silicon ◽  
Current Noise ◽  
Pin Diodes ◽  
Hydrogenated Amorphous ◽  
Operating Points

ABSTRACTThe noise spectra of hydrogenated amorphous silicon pin diodes are measured in the dark and under illumination at reverse and forward bias. The noise coefficients of 1/f noise at different operating points are determined. The superposition of the different noise mechanisms is investigated. A new empirical model and a method to calculate the noise in pin diodes is suggested. Transport and noise mechanisms are discussed.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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