Progress on background signal analysis of bare wafer inspection systems based on light scattering for III/V epitaxial growth monitoring

2014 ◽  
Author(s):  
Sandip Halder ◽  
Yves Mols ◽  
Dieter van den Heuvel ◽  
Jan van Puymbroeck ◽  
Matty Caymax ◽  
...  
Keyword(s):  
Light Scattering ◽  
Epitaxial Growth ◽  
Signal Analysis ◽  
Growth Monitoring ◽  
Background Signal ◽  
Wafer Inspection ◽  
Inspection Systems

A multichannel reflectance anisotropy spectrometer for epitaxial growth monitoring

2015 ◽  
Vol 26 (11) ◽  
pp. 115901 ◽  
Author(s):  
D Ariza-Flores ◽  
J Ortega-Gallegos ◽  
O Núñez-Olvera ◽  
R E Balderas-Navarro ◽  
L F Lastras-Martínez ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Growth Monitoring ◽  
Reflectance Anisotropy

Study of Defect Generated During Cu/Black Diamond CMP Process

2002 ◽  
Vol 732 ◽  
Author(s):  
Shaoyu Wu ◽  
Ning Li ◽  
J. M. Kang ◽  
T. W. M. Lam ◽  
B. Lin ◽  
...  
Keyword(s):  
Film Surface ◽  
Wafer Inspection ◽  
Patterned Wafers ◽  
Inspection Systems ◽  
Low K ◽  
Review Station

AbstractBlack Diamond (BD) is gaining popularity as a low k dielectric for copper/low k integration. However, because of lower hardness and more hydrophobic in nature of BD film surface comparing with those of the conventional oxide, some specific defects appear during CMP process of Cu/BD patterned wafers. In this study, the patterned wafer inspection systems, AIT II, and SEM review station are used to review and to classify such defects generated from CMP process. Using conventional Cu/Oxide CMP process, the percentage of these specific defects from Cu/BD CMP is typically more than 60 of total defect count. By modifying the composition of slurry with new additives and optimization of polishing and cleaning parameters, the total defect count can be reduced by 80%, in which the amount of specific defects is less than 5% of total defect count.

Particle Detection for 100-nm Patterned Wafers by Evanescent Light Illumination – Analysis of Evanescent Light Scattering Using Finite-Difference Time-Domain Method –

2006 ◽  
Vol 18 (6) ◽  
pp. 705-713
Author(s):  
Toshie Yoshioka ◽  
◽  
Takashi Miyoshi ◽  
Yasuhiro Takaya
Keyword(s):  
Light Scattering ◽  
Finite Difference ◽  
Time Domain ◽  
Finite Difference Time Domain ◽  
Wafer Surface ◽  
Light Illumination ◽  
Particle Detection ◽  
Wafer Inspection ◽  
Evanescent Light ◽  
Difference Time

Patterned wafer inspection technique is essential to high productivity and reliability in high-yield semiconductor manufacturing. Since circuit features are below 100nm, conventional imaging and light scattering methods cannot be applied to patterned wafer inspection technique due to the diffraction limit and the low S/N ratio. We propose a new particle detection method using annular evanescent light illumination. In this method, a converging annular beam used as a light source is incident to a micro-hemispherical lens. When the converging angle is greater than the critical angle, annular evanescent light is generated on the bottom surface of the hemispherical lens. Evanescent light is localized near the bottom of the hemispherical lens and decays exponentially away from it, so the evanescent light selectively illuminates a particle on the patterned wafer surface because it cannot illuminate the patterned wafer surface. The proposed method evaluates a particle on a patterned wafer surface by detecting scattered evanescent light pattern from the particle. To analyze the fundamental properties of the proposed method, the computer simulation was performed using the finite-difference time-domain (FDTD) method. It is found that the proposed method is effective for detecting 100nm sized particle on a patterned wafer consisting of 100nm lines and spaces, when the evanescent light illumination is done using P-polarized light and line orientation parallel to the incident plane. Finally, the experimental results suggest that 220nm sized particle can be detected on a patterned wafer consisting of about 200nm lines and spaces.

Evaluation of Post Ion-Implantation Resist Strip with the Background Signal of a Light Scattering Tool

2010 ◽  
Vol 49 (5) ◽  
pp. 056504 ◽  
Author(s):  
Sandip Halder ◽  
Rita Vos ◽  
Masayuki Wada ◽  
Diana Tsvetanova ◽  
Martine Claes ◽  
...  
Keyword(s):  
Light Scattering ◽  
Ion Implantation ◽  
Background Signal
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