Stepper exposure field uniformity mapping using electrical critical dimension measurements

Author(s):  
B.L. McCarson ◽  
T. Salisbury
Author(s):  
D. C. Joy ◽  
R. D. Bunn

The information available from an SEM image is limited both by the inherent signal to noise ratio that characterizes the image and as a result of the transformations that it may undergo as it is passed through the amplifying circuits of the instrument. In applications such as Critical Dimension Metrology it is necessary to be able to quantify these limitations in order to be able to assess the likely precision of any measurement made with the microscope.The information capacity of an SEM signal, defined as the minimum number of bits needed to encode the output signal, depends on the signal to noise ratio of the image - which in turn depends on the probe size and source brightness and acquisition time per pixel - and on the efficiency of the specimen in producing the signal that is being observed. A detailed analysis of the secondary electron case shows that the information capacity C (bits/pixel) of the SEM signal channel could be written as :


2020 ◽  
Vol 64 (1-4) ◽  
pp. 19-29
Author(s):  
Shuting Ren ◽  
Yong Li ◽  
Bei Yan ◽  
Jinhua Hu ◽  
Ilham Mukriz Zainal Abidin ◽  
...  

Structures of nonmagnetic materials are broadly used in engineering fields such as aerospace, energy, etc. Due to corrosive and hostile environments, they are vulnerable to the Subsurface Pitting Corrosion (SPC) leading to structural failure. Therefore, it is imperative to conduct periodical inspection and comprehensive evaluation of SPC using reliable nondestructive evaluation techniques. Extended from the conventional Pulsed eddy current method (PEC), Gradient-field Pulsed Eddy Current technique (GPEC) has been proposed and found to be advantageous over PEC in terms of enhanced inspection sensitivity and accuracy in evaluation and imaging of subsurface defects in nonmagnetic conductors. In this paper two GPEC probes for uniform field excitation are intensively analyzed and compared. Their capabilities in SPC evaluation and imaging are explored through simulations and experiments. The optimal position for deployment of the magnetic field sensor is determined by scrutinizing the field uniformity and inspection sensitivity to SPC based on finite element simulations. After the optimal probe structure is chosen, quantitative evaluation and imaging of SPC are investigated. Signal/image processing algorithms for SPC evaluation are proposed. Through simulations and experiments, it has been found that the T-shaped probe together with the proposed processing algorithms is advantageous and preferable for profile recognition and depth evaluation of SPC.


2012 ◽  
Vol E95.B (7) ◽  
pp. 2386-2392
Author(s):  
Jung-Hoon KIM ◽  
Tae-Heon JANG ◽  
Sung-Kuk LIM ◽  
Songjun LEE ◽  
Sung-Il YANG

2011 ◽  
Vol E94-B (1) ◽  
pp. 334-337 ◽  
Author(s):  
Jung-Hoon KIM ◽  
Hye-Kwang KIM ◽  
Eugene RHEE ◽  
Sung-Il YANG

Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.


Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.


2018 ◽  
Vol 47 (5) ◽  
pp. 44-50
Author(s):  
A. Myakonkikh ◽  
◽  
K. Kuvaev ◽  
A. Tatarintsev ◽  
N. Orlikovskii ◽  
...  
Keyword(s):  

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