Dual frequency silicon nitride film of low thermal budget for pre-metal dielectric applications in sub-0.25 μm devices

2003 ◽  
Author(s):  
Yuxiang Wang ◽  
J.H. Lee ◽  
B. Thakur ◽  
J. Huang
Keyword(s):  
Silicon Nitride ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Dual Frequency ◽  
Thermal Budget ◽  
Low Thermal Budget

The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD

2016 ◽  
Vol 18 (18) ◽  
pp. 13033-13044 ◽  
Author(s):  
B. B. Sahu ◽  
Y. Y. Yin ◽  
T. Tsutsumi ◽  
M. Hori ◽  
Jeon G. Han
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Plasma Chemistry ◽  
Correlation Study ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Dual Frequency ◽  
Plasma Parameters ◽  
Film Properties

A correlation study of plasma parameters and film properties and the implication of dual frequency PECVD for industry are proposed.

Hydrogen Bond Configuration Changes in PECVD Silicon Nitride Films During RTA

1995 ◽  
Vol 377 ◽  
Author(s):  
S. S. He ◽  
V. L. Shannon
Keyword(s):  
Silicon Nitride ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Dual Frequency ◽  
Silicon Nitride Films ◽  
Parallel Plate Reactor ◽  
Nitrogen Mixture ◽  
Configuration Changes ◽  
Deposited Film ◽  
Hydrogen Effusion

ABSTRACTPECVD silicon rich (x<4/3) and nitrogen rich (x>4/3) silicon nitride films have been deposited using a silane, ammonia, and nitrogen mixture at 400°C in a dual frequency parallel plate reactor. From FTIR measurements, most of the bonded hydrogen was observed to be present as N-H in the nitrogen rich films and as Si-H in the silicon rich films. In this study, the movement of hydrogen in the various nitride films as a result of Rapid Thermal Annealing (RTA) in N2 for 30 seconds has been investigated. While the intensity of the N-H stretching band was always found to decrease from that measured for the as-deposited film, the intensity of the Si-H stretching band was observed to increase for anneal temperatures up to 650°C. During the anneal process some hydrogen effusion takes place and some of hydrogen changes its bonding to silicon atoms from previous nitrogen atoms in the film. Consistent with the FTIR results, Hydrogen Forward Scattering (HFS), shows that only a small amount of hydrogen effuses from the silicon nitride film as a result of the RTA process below 650°C.

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

Investigation on the composition and structure of silicon nitride film prepared by ECR-PECVD

1994 ◽  
Vol 3 (9) ◽  
pp. 682-689 ◽  
Author(s):  
Chen Jun-fang ◽  
Cheng Shao-yu ◽  
Ren Zhao-xing ◽  
Zhang Su-qing ◽  
Ning Zhao-yuan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Composition And Structure
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