Optimization of Static Power, Leakage Power and Delay of Full Adder Circuit Using Dual Threshold MOSFET Based Design and T-Spice Simulation

2009 ◽  
Author(s):  
Anindya Ghosh ◽  
Debapriyo Ghosh
Keyword(s):  
Full Adder ◽  
Leakage Power ◽  
Spice Simulation ◽  
Static Power ◽  
Power Leakage

scholarly journals Design of low power 8-bit gate-diffusion input (GDI) full adder using variable body bias (VBB) technique in 90nm technology

2019 ◽  
Vol 14 (2) ◽  
pp. 912
Author(s):  
Woo Wei Kai ◽  
Nabihah Ahmad ◽  
Mohamad Hairol Jabbar
Keyword(s):  
Low Power ◽  
Average Power ◽  
Full Adder ◽  
Oxide Thickness ◽  
Low Complexity ◽  
Operating Voltage ◽  
Short Channel ◽  
Static Power ◽  
Subthreshold Leakage ◽  
Power Delay Product

In digital system, the full adders are fundamental circuits that are used for arithmetic operations. Adder operation can be used to implement and perform calculation of the multipliers, subtraction, comparators, and address operation in an Arithmetic Logic Unit (ALU). The subthreshold leakage current increasing as proportional with the scaling down of oxide thickness and transistor in short channel sizes. In this paper, a Gate-diffusion Input (GDI) circuit design technique allow minimization the number of transistor while maintaining low complexity of logic design and low power realization of Variable Body Biasing (VBB) technique to reduce the static power consumption. The Silterra 90nm process design kit (PDK) was used to design 8-bit full adder with VBB technique in full custom methodology by using Synopsys Electronic Design Automation (EDA) tools. The simulation of 8-bit full adder was compared within a conventional bias technique and VBB technique with operating voltage of  supply. The result showed the reduction of VBB technique in term of peak power,  and average power,   compare with conventional bias technique. Moreover, the Power Delay Product (PDP) showed 1.29pJ in VBB technique compare with conventional bias mode 1.67pJ. The area size of 8-Bit full adder was 10μm×23μm.

scholarly journals An Efficient Power Optimized 32 bit BCD Adder Using Multi-Channel Technique

2017 ◽  
Vol 6 (02) ◽  
pp. 07-12
Author(s):  
Diksha Siddhamshittiwar
Keyword(s):  
Average Power ◽  
Full Adder ◽  
Deep Submicron ◽  
Power Reduction ◽  
Vlsi Circuits ◽  
Power Gating ◽  
Static Power ◽  
Simulation Results ◽  
Efficient Power ◽  
Standby Mode

Static power reduction is a challenge in deep submicron VLSI circuits. In this paper 28T full adder circuit, 14T full adder circuit and 32 bit power gated BCD adder using the full adders respectively were designed and their average power was compared. In existing work a conventional full adder is designed using 28T and the same is used to design 32 bit BCD adder. In the proposed architecture 14T transmission gate based power gated full adder is used for the design of 32 bit BCD adder. The leakage supremacy dissipated during standby mode in all deep submicron CMOS devices is reduced using efficient power gating and multi-channel technique. Simulation results were obtained using Tanner EDA and TSMC_180nm library file is used for the design of 28T full adder, 14T full adder and power gated BCD adder and a significant power reduction is achieved in the proposed architecture.

scholarly journals Design and Performasnce Analysis of Hybrid Full Adder Using Finfet 40nm Technology

2019 ◽  
Vol 8 (6) ◽  
pp. 4521-4525
Keyword(s):  
Performance Analysis ◽  
Energy Efficient ◽  
Full Adder ◽  
Propagation Delay ◽  
Leakage Power ◽  
Drive Current ◽  
Internal Logic ◽  
Low Leakage ◽  
Cadence Tool ◽  
Power And Energy

Designing a low power and energy efficient circuits in FinFET technology is of great Challenge. This paper presents the internal logic structure and circuit operation using the devices, CMOS and FinFETs for designing the hybrid adder cells. At transistor level, CMOS and FinFET based hybrid full adder (HFA) and improved hybrid full adder (IHFA) is designed. Simulations are carried out using the cadence tool in UMC 40nm and the performance analysis of these HFA and IHFA are compared with the 40nm FinFET technology. It is observed that IHFA is better when compared with the HFA in terms of propagation delay, power consumption and energy delay product. IHFA achieves the higher drive current and low leakage power for better mobility and transistor scaling as compared with HFA.

scholarly journals Estimation of Leakage Power and Delay in CMOS Circuits

2020 ◽  
Vol 4 (7) ◽  
pp. 14-19
Author(s):  
Mohasinul Huq N Md ◽  
Mohan Das S ◽  
Bilal N Md
Keyword(s):  
Power Dissipation ◽  
Supply Voltage ◽  
Full Adder ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Leakage Power ◽  
Nand Gate ◽  
High Threshold ◽  
Cmos Circuits ◽  
Low Leakage

This paper presents an estimation of leakage power and delay for 1-bit Full Adder (FA)designed which is based on Leakage Control Transistor (LCT) NAND gates as basic building block. The main objective is to design low leakage full adder circuit with the help of low and high threshold transistors. The simulations for the designed circuits performed in cadence virtuoso tool with 45 nm CMOS technology at a supply voltage of 0.9 Volts. Further, analysis of effect of parametric variation on leakage current and propagation delay in CMOS circuits is performed. The saving in leakage power dissipation for LCT NAND_HVT gate is up to 72.33% and 45.64% when compared to basic NAND and LCT NAND gate. Similarly for 1-bit full adder the saving is up to 90.9% and 40.08% when compared to basic NAND FA and LCT NAND.

A New Keeper Domino Logic Based Full Adder for High Speed Arithmetic Circuits

2020 ◽  
Vol 12 ◽  
Author(s):  
Deepika Bansal ◽  
Bal Chand Nagar ◽  
Ajay Kumar ◽  
Brahamdeo Prasad Singh
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
High Efficiency ◽  
Dynamic Logic ◽  
Full Adder ◽  
Leakage Power ◽  
Low Leakage ◽  
Dynamic Circuits ◽  
Power Delay Product ◽  
Domino Circuits

Objective: A new efficient keeper circuit has been proposed in this article for achieving low leakage power consumption and to improve power delay product of the dynamic logic using carbon nanotube MOSFET. Method: As a benchmark, an one-bit adder has been designed and characterized with both technologies Si-MOSFET and CN-MOSFET using proposed and existing dynamic circuits. Furthermore, a comparison has been made to demonstrate the superiority of CN-MOSFET technology with Synopsys HSPICE tool for multiple bit adders available in the literature. Result: The simulation results show that the proposed keeper circuit provides lower static and dynamic power consumption up to 57 and 40% respectively, as compared to the domino circuits using 32nm CN-MOSFET technology provided by Stanford University. Moreover, the proposed keeper configuration provides better performance using SiMOSFET and CN-MOSFET technologies. Conclusion: A comparison of the proposed keeper with previously published designs is also given in terms of power consumption, delay and power delay product with the improvement up to 75, 18 and 50% respectively. The proposed circuit uses only two transistors, so it requires less area and gives high efficiency.

scholarly journals Low-Power High-Speed Double Gate 1-bit Full Adder Cell

2016 ◽  
Vol 62 (4) ◽  
pp. 329-334 ◽  
Author(s):  
Raushan Kumar ◽  
Sahadev Roy ◽  
C.T. Bhunia
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Average Power ◽  
Full Adder ◽  
Cmos Technology ◽  
Spice Simulation ◽  
Pass Transistor ◽  
Voltage Swing

Abstract In this paper, we proposed an efficient full adder circuit using 16 transistors. The proposed high-speed adder circuit is able to operate at very low voltage and maintain the proper output voltage swing and also balance the power consumption and speed. Proposed design is based on CMOS mixed threshold voltage logic (MTVL) and implemented in 180nm CMOS technology. In the proposed technique the most time-consuming and power consuming XOR gates and multiplexer are designed using MTVL scheme. The maximum average power consumed by the proposed circuit is 6.94μW at 1.8V supply voltage and frequency of 500 MHz, which is less than other conventional methods. Power, delay, and area are optimized by using pass transistor logic and verified using the SPICE simulation tool at desired broad frequency range. It is also observed that the proposed design may be successfully utilized in many cases, especially whenever the lowest power consumption and delay are aimed.

A HIGH-LEVEL TECHNIQUE FOR ESTIMATION AND OPTIMIZATION OF LEAKAGE POWER FOR FULL ADDER

2013 ◽  
Vol 12 (02) ◽  
pp. 1350011
Author(s):  
JAYRAM SHRIVAS ◽  
SHYAM AKASHE ◽  
NITESH TIWARI
Keyword(s):  
Leakage Current ◽  
Power Supply ◽  
Low Voltage ◽  
Full Adder ◽  
Leakage Power ◽  
Power Gating ◽  
Sleep Transistors ◽  
Power Application ◽  
High Level ◽  
Standby Mode

Optimization of power is a very important issue in low-voltage and low-power application. In this paper, we have proposed power gating technique to reduce leakage current and leakage power of one-bit full adder. In this power gating technique, we use two sleep transistors i.e., PMOS and NMOS. PMOS sleep transistor is inserted between power supply and pull up network. And NMOS sleep transistor is inserted between pull down network and ground terminal. These sleep transistors (PMOS and NMOS) are turned on when the circuit is working in active mode. And sleep transistors (PMOS and NMOS) are turned off when circuit is working in standby mode. We have simulated one-bit full adder and compared with the power gating technique using cadence virtuoso tool in 45 nm technology at 0.7 V at 27°C. By applying this technique, we have reduced leakage current from 2.935 pA to 1.905 pA and leakage power from 25.04μw to 9.233μw. By using this technique, we have reduced leakage power up to 63.12%.

scholarly journals Two state-of-the-arts current-mode ternary full adders based on CNTFET Technology

2020 ◽  
Vol 9 (1) ◽  
pp. 19
Author(s):  
Mona Moradi
Keyword(s):  
Power Dissipation ◽  
Digital Signal ◽  
Current Mode ◽  
Full Adder ◽  
Vlsi Circuits ◽  
Digital Signal Processors ◽  
The Arts ◽  
Threshold Voltages ◽  
Static Power ◽  
Signal Processors

Adder core respecting to its various applications in VLSI circuits and<br />systems is considered as the most critical building block in microprocessors,<br />digital signal processors and arithmetic operations. Novel designs of a low<br />power and complexity Current Mode 1-bit Full Adder cell based on<br />CNTFET technology has been presented in this paper. Three major parts<br />construct their structures; 1) the first part that converts current to voltage; 2)<br />threshold detectors (TD); and 3) parallel paths to convey the output currents<br />flow. Adjusting threshold voltages which are significant factor for setting<br />threshold detectors switching point has been achieved by means of CNTFET<br />technology. It would bring significant improvements in adjusting threshold<br />voltages, regarding to its unique characterizations. Simple design, less<br />transistor counts and static power dissipation and better performance<br />comparing previous designs could be considered as some advantages of the<br />novel designs.

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