High-Power-Density 0.25 µm Gate-Length AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating 6H–SiC Substrates

J.-W. Lee; V. Kumar; I. Adesida

doi:10.1143/jjap.45.13

High-Power-Density 0.25 µm Gate-Length AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating 6H–SiC Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.13 ◽

2006 ◽

Vol 45 (1A) ◽

pp. 13-17 ◽

Cited By ~ 17

Author(s):

J.-W. Lee ◽

V. Kumar ◽

I. Adesida

Keyword(s):

Power Density ◽

High Power ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Gate Length ◽

High Electron ◽

High Power Density ◽

High Electron Mobility ◽

Electron Mobility Transistors

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High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well Power High-Electron-Mobility Transistors for 2.4 V Medium-Power Wireless Communication Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1856 ◽

1997 ◽

Vol 36 (Part 1, No. 3B) ◽

pp. 1856-1861 ◽

Cited By ~ 5

Author(s):

Yeong-Lin Lai ◽

Edward Y. Chang ◽

Chun-Yen Chang ◽

T. H. Liu ◽

S. P. Wang

Keyword(s):

Wireless Communication ◽

High Power ◽

Electron Mobility ◽

High Efficiency ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Power Density ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Ingaas Quantum Well

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Dual-gate AlGaN/GaN high-electron-mobility transistors with short gate length for high-power mixers

physica status solidi (c) ◽

10.1002/pssc.200564104 ◽

2006 ◽

Vol 3 (3) ◽

pp. 469-472

Author(s):

K. Shiojima ◽

T. Makimura ◽

T. Maruyama ◽

T. Kosugi ◽

T. Suemitsu ◽

...

Keyword(s):

High Power ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dual Gate

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Dry etching bilayer and trilevel resist systems for submicron gate length GaAs based high electron mobility transistors for power and digital applications

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585949 ◽

1992 ◽

Vol 10 (6) ◽

pp. 2949 ◽

Cited By ~ 9

Author(s):

F. Ren

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Dry Etching ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Large-Periphery ALGaN/GaN High Electron Mobility Transistors for High-Power Operation

2010 18th Biennial University/Government/Industry Micro/Nano Symposium ◽

10.1109/ugim.2010.5508902 ◽

2010 ◽

Author(s):

Liang Pang ◽

Zhi Zheng ◽

Hui-Chan Seo ◽

Patrick Chapman ◽

Philip Krein ◽

...

Keyword(s):

High Power ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

High Power Operation ◽

Power Operation

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Numerical performance evaluation of AlGaN/GaN high electron mobility transistors including gate length effects

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2009.04.026 ◽

2009 ◽

Vol 41 (8) ◽

pp. 1517-1521 ◽

Cited By ~ 6

Author(s):

Z. Hashempour ◽

A. Asgari ◽

S. Nikipar ◽

M. Abolhasani ◽

M. Kalafi

Keyword(s):

Performance Evaluation ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Numerical Performance ◽

Length Effects

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Multi-Finger High Power Gallium Nitride Based High Electron Mobility Transistors

2019 6th International Conference on Electrical and Electronics Engineering (ICEEE) ◽

10.1109/iceee2019.2019.00046 ◽

2019 ◽

Author(s):

Jaya Jha ◽

Sreenadh Surapaneni ◽

Akhil Kumar S. ◽

Swaroop Ganguly ◽

Dipankar Saha

Keyword(s):

Gallium Nitride ◽

High Power ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Effect of Gate Length on the Electrical Characteristics of Nanoelectronic AlGaN/GaN High Electron Mobility Transistors to Fabricate the Biomedical Sensors in Nanoelectronics

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2018.2361 ◽

2018 ◽

Vol 13 (8) ◽

pp. 1123-1127 ◽

Cited By ~ 1

Author(s):

Sanjib Kalita ◽

Subhadeep Mukhopadhyay

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Gate Length ◽

High Electron ◽

Electrical Characteristics ◽

High Electron Mobility ◽

Biomedical Sensors ◽

Electron Mobility Transistors

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Gate Length Scaling Effect on High-Electron Mobility Transistors Devices Using AlGaN/GaN and AlInN/AlN/GaN Heterostructures

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2014.8726 ◽

2014 ◽

Vol 14 (8) ◽

pp. 6243-6246 ◽

Cited By ~ 2

Author(s):

S. Y. Liao ◽

C. C. Lu ◽

T. Chang ◽

C. F. Huang ◽

C. H. Cheng ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Gate Length ◽

High Electron ◽

Scaling Effect ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Length Scaling

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Electrical characteristics of high-power AlGaN-GaN high electron mobility transistors irradiated with protons and heavy ions

10.1117/12.2250250 ◽

2017 ◽

Author(s):

Yongkun Sin ◽

Jeremy Bonsall ◽

Zachary Lingley ◽

Miles Brodie ◽

Maribeth Mason

Keyword(s):

High Power ◽

Electron Mobility ◽

Heavy Ions ◽

High Electron Mobility Transistors ◽

High Electron ◽

Electrical Characteristics ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Short-Channel AlGaN/GaN Field-Plated High-Electron-Mobility Transistors for X-Band High Power Operation

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.1479 ◽

2008 ◽

Vol 47 (3) ◽

pp. 1479-1483 ◽

Cited By ~ 2

Author(s):

Jong-Wook Lee ◽

Almaz S. Kuliev ◽

Ilesanmi Adesida

Keyword(s):

High Power ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Short Channel ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

X Band ◽

High Power Operation ◽

Power Operation

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