Static and dynamic characterization of GaN HEMT with low inductance vertical phase leg design for high frequency high power applications

2016 ◽  
Author(s):  
Nidhi Haryani ◽  
Xuning Zhang ◽  
Rolando Burgos ◽  
Dushan Boroyevich
Keyword(s):  
High Power ◽  
High Frequency ◽  
Dynamic Characterization ◽  
Gan Hemt ◽  
Leg Design

EXTRACTION OF GATE CAPACITANCE OF HIGH-FREQUENCY AND HIGH-POWER GaN HEMTs BY MEANS OF CELLULAR MONTE CARLO SIMULATIONS

2011 ◽  
Vol 20 (03) ◽  
pp. 423-430
Author(s):  
DIEGO GUERRA ◽  
FABIO ALESSIO MARINO ◽  
STEPHEN GOODNICK ◽  
DAVID FERRY ◽  
MARCO SARANITI
Keyword(s):  
Monte Carlo ◽  
High Power ◽  
High Frequency ◽  
Small Signal ◽  
Small Signal Analysis ◽  
Gan Hemt ◽  
Full Band ◽  
Cellular Monte Carlo ◽  
Dc Characterization

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as Cg, Cgd, and Cgs, were directly and indirectly extracted combining small-signal analysis and DC characterization.

Static and Dynamic Characterization of High Power Silicon Carbide BJT Modules

2016 ◽  
Vol 52 (6) ◽  
pp. 4990-4998 ◽  
Author(s):  
Muhammad Nawaz ◽  
Nan Chen ◽  
Filippo Chimento ◽  
Liwei Wang
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Dynamic Characterization

Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications

2014 ◽  
Vol 806 ◽  
pp. 81-87
Author(s):  
Stephanie Rennesson ◽  
Francois Lecourt ◽  
Nicolas Defrance ◽  
Magdalena Chmielowska ◽  
Sébastien Chenot ◽  
...  
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Frequency ◽  
Aluminum Content ◽  
Layer Structure ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Power Density ◽  
Gan Hemt ◽  
Algan Buffer

The aim of this paper is to optimize the epitaxial layer structure of an AlGaN/GaN high electron mobility transistor (HEMT) for high power density at high frequency. The idea is to play on the polarization engineering with the different layers of the epitaxial stack. The influence of the cap and barrier layer thicknesses, the aluminum content in the barrier and the insertion of an AlGaN buffer layer are studied through the electron gas density, electron mobility and sheet resistance. This permits to find out the best trade-off in order to satisfy the requirements for high performances.

Characterization of a High-Power, High-Frequency, Soft-Switching Power Converter for EMC Considerations

2001 ◽  
Author(s):  
S. T. Li ◽  
J. B. McGee ◽  
P. M. McGinnis ◽  
J. H. Schukantz ◽  
Jr.
Keyword(s):  
High Power ◽  
High Frequency ◽  
Power Converter ◽  
Soft Switching ◽  
Switching Power
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