Modeling and characterization of high-frequency high-power GaN/SiC HBTs operating at high temperature

1996 ◽  
Author(s):  
Hamid Z. Fardi ◽  
Jacques I. Pankove
Keyword(s):  
High Temperature ◽  
High Power ◽  
High Frequency

SiC – a semiconductor for high-power, high-temperature and high-frequency devices

1994 ◽  
Vol T54 ◽  
pp. 283-290 ◽  
Author(s):  
E Janzén ◽  
O Kordina ◽  
A Henry ◽  
W M Chen ◽  
N T Son ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
High Frequency ◽  
High Frequency Devices

EXTRACTION OF GATE CAPACITANCE OF HIGH-FREQUENCY AND HIGH-POWER GaN HEMTs BY MEANS OF CELLULAR MONTE CARLO SIMULATIONS

2011 ◽  
Vol 20 (03) ◽  
pp. 423-430
Author(s):  
DIEGO GUERRA ◽  
FABIO ALESSIO MARINO ◽  
STEPHEN GOODNICK ◽  
DAVID FERRY ◽  
MARCO SARANITI
Keyword(s):  
Monte Carlo ◽  
High Power ◽  
High Frequency ◽  
Small Signal ◽  
Small Signal Analysis ◽  
Gan Hemt ◽  
Full Band ◽  
Cellular Monte Carlo ◽  
Dc Characterization

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as Cg, Cgd, and Cgs, were directly and indirectly extracted combining small-signal analysis and DC characterization.

Ion Implantation and Annealing Effects in Silicon Carbide

1996 ◽  
Vol 438 ◽  
Author(s):  
V. Heera ◽  
W. Skorupa
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Ion Implantation ◽  
High Power ◽  
High Frequency ◽  
Ion Beam ◽  
Surface Erosion ◽  
Annealing Effects ◽  
Ion Ranges ◽  
Induced Crystallization

AbstractSiC is a promising semiconductor material for high-power/high-frequency and hightemperature electronic applications. For selective doping of SiC ion implantation is the only possible process. However, relatively little is known about ion implantation and annealing effects in SiC. Compared to ion implantation into Si there is a number of specific features which have to be considered for successful ion beam processing of SiC. A brief review is given on some aspects of ion implantation in and annealing of SiC. The ion implantation effects in SiC are discussed in direct comparison to Si. The following issues are addressed: ion ranges, radiation damage, amorphization, high temperature implantation, ion beim induced crystallization and surface erosion.

High Frequency Characterization of High Temperature Superconducting Thin-Film Lines

1991 ◽  
Vol 11 (2) ◽  
pp. 255-268 ◽  
Author(s):  
T. E. van Deventer ◽  
P. B. Katehi ◽  
J. Y. Josefowicz ◽  
D. B. Rensch
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
High Frequency ◽  
Superconducting Thin Film ◽  
High Temperature Superconducting

Challenges for High Temperature Silicon Carbide Electronics

2003 ◽  
Vol 764 ◽  
Author(s):  
C.-M. Zetterling ◽  
S.-M. Koo ◽  
E. Danielsson ◽  
W. Liu ◽  
S.-K. Lee ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
High Frequency ◽  
Process Technology ◽  
High Temperature Electronics ◽  
Higher Power ◽  
Device Structures ◽  
Power Densities

AbstractSilicon carbide has been proposed as an excellent material for high-frequency, high-power and high-temperature electronics. High power and high frequency applications have been pursued for quite some time in SiC with a great deal of success in terms of demonstrated devices. However, self-heating problems due to the much higher power densities that result when ten times higher electrical fields are used inside the devices needs to be addressed. High-temperature electronics has not yet experienced as much attention and success, possibly because there is no immediate market. This paper will review some of the advances that have been made in high-temperature electronics using silicon carbide, starting from process technology, continuing with device design, and finishing with circuit examples. For process technology, one of the biggest obstacles is long-term stable contacts. Several device structures have been electrically characterized at high temperature (BJTs and FETs) and will be compared to surface temperature measurements and physical device simulation. Finally some proposed circuit topologies as well as novel solutions will be presented.

Characterization of a High-Power, High-Frequency, Soft-Switching Power Converter for EMC Considerations

2001 ◽  
Author(s):  
S. T. Li ◽  
J. B. McGee ◽  
P. M. McGinnis ◽  
J. H. Schukantz ◽  
Jr.
Keyword(s):  
High Power ◽  
High Frequency ◽  
Power Converter ◽  
Soft Switching ◽  
Switching Power
Sign in / Sign up

Export Citation Format

Share Document