A 3-PS dead-zone double-edge-checking phase-frequency detector with 4.78 GHZ operating frequencies

Author(s):  
Chien-Ping Chou ◽  
Zhi-Ming Lin ◽  
Jun-Da Chen

A CMOS Implementation of Time amplifier (TA) based Bang-Bang Phase Frequency Detector (BBPFD) using Sense amplifier based flip flop (SAFF) is presented in this paper using 0.18μm CMOS technology. A time amplifier based on feedback output generator concept is utilized in minimizing the metastability and increasing the gain of TA which in turn boosts the gain of Phase Frequency Detector (PFD). Also, a modified SAFF was built in CMOS 0.18μm technology at 1.8V which further reduces the hysteresis and metastability aspect related to PFD. The proposed PFD works at a maximum frequency of 4GHz consuming 0.46mW of power with no dead zone.


Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1502
Author(s):  
Waseem Abbas ◽  
Zubair Mehmood ◽  
Munkyo Seo

A 65–67 GHz phase-locked loop (PLL) with a novel low power phase-frequency detector (PFD) in 65 nm LP CMOS is presented. The PLL consists of a V-band voltage-controlled oscillator (VCO), a divide-by-two injection-locked frequency divider (ILFD), and a current-mode logic (CML) divider chain. A charge pump (CP) and a 2nd-order loop filter are used with PFD for VCO tuning. The PFD is implemented with 16 transistors with dead-zone-free capability. The measured locking range of the PLL is from 65.15 to 67.4 GHz, with −11.5 dBm measured output power at 66.05 GHz while consuming 88 mW. The measured phase noise at 1 MHz offset is −84.43 dBc/Hz. The chip area of the PLL is 0.84 mm2 including probing pads. The proposed PLL can be utilized as a frequency synthesizer for carrier signal generation in IEEE 802.11ad standard high data rate transceiver circuits.


Author(s):  
Suraj K. Saw ◽  
Madhusudan Maiti ◽  
Preetisudha Meher ◽  
Alak Majumder

Background & Introduction: With the advent of technology, though the literature highlights many designs of Phase Frequency Detector (PFD), there remains some challenges like area overhead, switching noise near frequency lock point and fast, accurate response to mitigate dead zone and output errors. Methods: In this article, we have unearthed a low power, high speed and dead zone free PFD, which eliminates the switching noise near that lock-in node. This simple design uses lesser number of transistors to obtain smaller estimated layout area of 0.748mm2 and low power of 496.12μW, when operated at 10 GHz frequency at a power supply of 1.8V in 90nm CMOS technology. Results: The simulation reads a phase noise and output noise of -113.142dBc/Hz and -180.712dB at 1MHz offset. The circuit not only runs at a frequency as high as 40GHz, but also compatible to be operated at a power supply of as small as 0.9V. Conclusion: Process Variation analysis performed proves the robustness of the proposed circuit at all process corners. Also, the design gets validated at lower process nodes like 28nm UMC.


2019 ◽  
Vol 13 (7) ◽  
pp. 1056-1062 ◽  
Author(s):  
Amir Fathi ◽  
Morteza Mousazadeh ◽  
Abdollah Khoei

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