scholarly journals Electrical Characterization and Source-Drain Voltage Dependent Mobility of P-Channel Organic Field-Effect Transistors Using MATLAB Simulation

2013 ◽  
Author(s):  
Umar Farok ◽  
Yona Falinie ◽  
Afishah Alias ◽  
Bablu Gosh ◽  
Ismail Saad ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Organic Field Effect Transistors ◽  
Matlab Simulation ◽  
Drain Voltage ◽  
Voltage Dependent

Drain voltage dependent analytical model of tunnel field-effect transistors

2011 ◽  
Vol 110 (2) ◽  
pp. 024510 ◽  
Author(s):  
Anne S. Verhulst ◽  
Daniele Leonelli ◽  
Rita Rooyackers ◽  
Guido Groeseneken
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Voltage ◽  
Voltage Dependent

Organic crystalline monolayers for ideal-behaviours in organic field-effect transistors

2021 ◽  
Author(s):  
Lang Jiang ◽  
Mingchao Xiao ◽  
Xi ZHANG ◽  
Jie Liu ◽  
Xike Gao ◽  
...  
Keyword(s):  
Physical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Organic Field Effect Transistors ◽  
Commercial Applications

Organic field-effect transistors with accurate electrical characterization and parameterization of physical properties are essential for fundamental studies and commercial applications. However, with the improvement of mobility, the non-ideal behaviours have...

scholarly journals Inexpensive Measuring System for the Characterization of Organic Transistors

2018 ◽  
Vol 2018 ◽  
pp. 1-9
Author(s):  
Clara Pérez-Fuster ◽  
José Vicente Lidón-Roger ◽  
Laura Contat-Rodrigo ◽  
Eduardo García-Breijo
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Measuring System ◽  
Organic Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Semiconductor Devices ◽  
Measuring Module ◽  
Four Quadrant

A measuring module has been specifically designed for the electrical characterization of organic semiconductor devices such as organic field effect transistors (OFETs) and organic electrochemical transistors (OECTs) according to the IEEE 1620-2008 standard. This device has been tested with OFETs based on 6,13-bis(triisopropylsilylethinyl)pentacene (TIPS-pentacene). The measuring system has been constructed using a NI-PXIe-1073 chassis with integrated controller and two NI-PXI-4132 programmable high-precision source measure units (SMUs) that offer a four-quadrant ± 100 V output, with resolution down to 10 pA. LabVIEW™ has been used to develop the appropriate program. Most of the main OFET parameters included in the IEEE 1620 standard can be measured by means of this device. Although nowadays expensive devices for the characterization of Si-based transistors are available, devices for the characterization of organic transistors are not yet widespread in the market. Fabrication of a specific and flexible module that can be used to characterize this type of transistors would provide a powerful tool to researchers.

Charge Injection in Regioregular Poly-(3-Hexythiophene) Organic Field-Effect Transistors with Different Metal Electrodes

2013 ◽  
Vol 873 ◽  
pp. 752-756
Author(s):  
Rui Rui Zhang ◽  
Shi Wei Lin ◽  
Jian Jun Liao
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Device Performance ◽  
Carrier Injection ◽  
Organic Field Effect Transistors ◽  
Drain Voltage ◽  
Metal Electrodes ◽  
Au Electrode ◽  
Regioregular Poly

Here we report on regioregular poly-(3-hexythiophene) (P3HT) organic field-effect transistors (OFETs) with various metal electrodes: pristine Au, pristine Cr, and Cr/Au. Compared to the performance of OFETs using different electrodes, the OFETs with Au electrode have better mobility (μ = 0.0090 cm2/Vs) and larger current at the same source-drain voltage and gate voltage. The enhancement of the device performance with Au electrode can be attributed to a small contact resistance and a small barrier height to P3HT for hole carrier injection.

Static model for organic field-effect transistors including both gate-voltage-dependent mobility and depletion effect

2006 ◽  
Vol 88 (23) ◽  
pp. 233514 ◽  
Author(s):  
R. R. Schliewe ◽  
F. A. Yildirim ◽  
W. von Emden ◽  
R. Witte ◽  
W. Bauhofer ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Static Model ◽  
Organic Field Effect Transistors ◽  
Depletion Effect ◽  
Voltage Dependent
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