Static model for organic field-effect transistors including both gate-voltage-dependent mobility and depletion effect

2006 ◽  
Vol 88 (23) ◽  
pp. 233514 ◽  
Author(s):  
R. R. Schliewe ◽  
F. A. Yildirim ◽  
W. von Emden ◽  
R. Witte ◽  
W. Bauhofer ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Static Model ◽  
Organic Field Effect Transistors ◽  
Depletion Effect ◽  
Voltage Dependent

scholarly journals A Static Model for Electrolyte-Gated Organic Field-Effect Transistors

2011 ◽  
Vol 58 (10) ◽  
pp. 3574-3582 ◽  
Author(s):  
Deyu Tu ◽  
Lars Herlogsson ◽  
Loïg Kergoat ◽  
Xavier Crispin ◽  
Magnus Berggren ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Static Model ◽  
Organic Field Effect Transistors

Influence of distributed trap states on the characteristics of top and bottom contact organic field-effect transistors

2004 ◽  
Vol 19 (7) ◽  
pp. 2014-2027 ◽  
Author(s):  
T. Lindner ◽  
G. Paasch ◽  
S. Scheinert
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Analytical Approximation ◽  
Trap States ◽  
Organic Field Effect Transistors ◽  
Schottky Type ◽  
Internal Concentration ◽  
Free Case

Numerical simulations of organic field-effect transistors (OFET) of bottom and top contact (BOC, TOC) design with different source/drain contacts were carried out considering an exponential distribution of trap states in the gap of the active layer (a-Si model). For ohmic contacts, the current-voltage characteristics are similar to the trap-free case and there is not much difference between the two designs. However, the currents are lower due to immobile trapped charges, the threshold voltage is shifted, and the inverse subthreshold slope increases due to trap recharging. An analytical approximation for the effective mobility deviates from the simulation up to 20%. For low source/drain work function, there occur particular dependencies of the current on the gate voltage for the two designs, which are explained with the internal concentration and field profiles. A series resistance between source and channel causes in the TOC structure an abrupt transition from the gate voltage independent active region into saturation. In the BOC case, the reverse-biased Schottky-type source contact dominates the current. Through simulation of measured characteristics of prepared OFETs based on a modified poly-(phenylene-vinylene), the observed hysteresis is analyzed.

Current versus gate voltage hysteresis in organic field effect transistors

2009 ◽  
Vol 140 (7) ◽  
pp. 735-750 ◽  
Author(s):  
Martin Egginger ◽  
Siegfried Bauer ◽  
Reinhard Schwödiauer ◽  
Helmut Neugebauer ◽  
Niyazi Serdar Sariciftci
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Voltage Hysteresis
Sign in / Sign up

Export Citation Format

Share Document