Cyanate ester die attach material for radiation hardened electronic packages

2002 ◽  
Author(s):  
T. Shah ◽  
S. Danziger ◽  
K. Moores ◽  
Y. Joshi
Keyword(s):  
Cyanate Ester ◽  
Electronic Packages ◽  
Die Attach ◽  
Radiation Hardened

High temperature Au-based solder reliability in electronic packages for harsh environments

2011 ◽  
Vol 2011 (1) ◽  
pp. 000438-000445
Author(s):  
M.F. Sousa ◽  
S. Riches ◽  
C. Johnston ◽  
P.S. Grant
Keyword(s):  
High Temperature ◽  
Thermal Cycling ◽  
Thermal Shock ◽  
Microstructural Analysis ◽  
Temperature Stability ◽  
Acoustic Microscopy ◽  
Harsh Environments ◽  
Electronic Packages ◽  
High Temperature Stability ◽  
Die Attach

The operation of electronic packages in high temperature environments is a significant challenge for the microelectronics industry, and poses a challenge to the traditional temperature limit of 125°C for high electronic systems, such as those used in down-hole, well-logging and aero-engine applications. The present work aims to develop understanding of how and why attach materials for Si dies degrade/fail under harsh environments by investigating high temperature Au based solders. Au-2wt%Si eutectic melts at < 400°C and offers high temperature stability but high temperature processing and complex manufacturing steps are the major drawbacks. Changes in the die attach material were investigated by isothermal ageing at 350°C, thermal shock and thermal cycling treatments. Die attach reliability investigated by thermal shock and thermal cycling showed that the bonded area degraded. Nevertheless, most of the samples tested had high bonded area ranging from 92.5 to 97.5%. The failure behaviour of the die attach materials included cracking of die and/or attach material, delamination and voiding. Scanning acoustic microscopy images provided a rapid assessment of delamination and other defects and their location within the package. Microstructural analysis and die shear testing were also carried out, along with the high temperature endurance of a SOI test chip for signal conditioning and processing applications at 250°C. All functions evaluated have shown stable performance at 250°C for up to 9000 hours.

Effects of Die-Attach Voids on the Thermal Impedance of Power Electronic Packages

2017 ◽  
Vol 7 (10) ◽  
pp. 1608-1616 ◽  
Author(s):  
Sujay Singh ◽  
Jifa Hao ◽  
Daniel Hoffman ◽  
Thomas Dixon ◽  
Andrew Zedolik ◽  
...  
Keyword(s):  
Electronic Packages ◽  
Power Electronic ◽  
Thermal Impedance ◽  
Die Attach

Assessing the Reliability of Die Attach Materials in Electronic Packages for High Temperature Applications

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000001-000006
Author(s):  
M.F. Sousa ◽  
S. Riches ◽  
C. Johnston ◽  
P.S. Grant
Keyword(s):  
High Temperature ◽  
Low Cost ◽  
Temperature Stability ◽  
Temperature Limit ◽  
Acoustic Microscopy ◽  
Harsh Environments ◽  
Electronic Packages ◽  
Conductive Adhesives ◽  
Die Attach ◽  
Temperature Exposure

The operation of electronic packages under exceptionally harsh environments presents a significant challenge for the microelectronics industry. The traditional temperature limit for high temperature exposure of electronics system (for example, in down-hole, well-logging and aero-engine applications) has now to be extended from 125 to 250°C. The present work aims at developing understanding of how and why attach materials for Si dies degrade/fail under harsh environments. Two types of die attach materials have been studied: electrically conductive adhesives (ECAs) that offer low temperature assembly, low cost, and relatively low stresses imparted on the die and substrate but are generally considered unsuitable for harsh environments; and Au-2wt.%Si eutectic that offers elevated temperature stability and stiffness but requires high temperature processing and more complex manufacturing steps. Die attach assembly has been investigated using scanning electron microscopy and scanning acoustic microscopy (SAM) after ageing, thermal shock and thermal cycling treatments. The failure behaviour of the die attach materials included phenomena such as cracking of die and/or attach material; outgassing and voiding; and delamination. SAM images were particularly helpful in studying non-destructively die/die attach and die/substrate interfaces.

Engineering Model for Interfacial Stresses of a Heated Bimaterial Structure with Bond Material Used in Electronic Packages

2005 ◽  
Vol 2 (2) ◽  
pp. 132-141 ◽  
Author(s):  
D. Sujan ◽  
M. V. V. Murthy ◽  
K. N. Seetharamu ◽  
A. Y. Hassan
Keyword(s):  
Correction Factor ◽  
Temperature Drop ◽  
Fem Analysis ◽  
Electronic Packages ◽  
Linear Temperature ◽  
Bonded Materials ◽  
Die Attach ◽  
Method Of Solution ◽  
Different Temperatures ◽  
Bimaterial Structure

A model is proposed for the shearing and peeling stresses occurring at the interface of two thin bonded objects as a function of the effect of bond materials at the interface. The existing uniform temperature model proposed by Suhir is upgraded to account for different temperatures of the layers by incorporating a temperature ratio parameter and eventually a correction factor to Suhir's model. Then the model is further upgraded to account for the linear temperature gradients in the layers by incorporating two temperature drop ratios and eventually a second correction factor. This upgraded model can be considered as a generalized one for predicting temperature conditions which may occur in the bonded materials. A simpler method of solution is used to develop this model which does not involve solving integro-differential equations as found in the Suhir's method. The results are presented for the case of die and die attach as commonly found in electronic packaging and are compared to the case where a bond is absent. The results are also compared with those obtained by Finite Element Method (FEM) analysis.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

Multichannel Radiation-Hardened Instrumentation Amplifier for Sensor Systems and Analog Interfaces of Demanding Application

2016 ◽  
Vol 18 (1) ◽  
pp. 76-86
Author(s):  
N.N. Prokopenko ◽  
N.V. Butyrlagin ◽  
A.V. Bugakova ◽  
A.A. Ignashin
Keyword(s):  
Instrumentation Amplifier ◽  
Sensor Systems ◽  
Radiation Hardened

Analysis of Two Electrical Failures Caused by Die Attach of Exposed Pad Package

2014 ◽  
Author(s):  
Jinglong Li ◽  
Motohiko Masuda ◽  
Yi Che ◽  
Miao Wu
Keyword(s):  
Bonding Process ◽  
Die Attach ◽  
Die Bonding ◽  
Generic Analysis

Abstract Die attach is well known in die bonding process. Its electrical character is simple. But some failures caused by die attach are not so simple. And it is not proper to analyze by a generic analysis flow. The analysis of two failures caused by die attach are presented in this paper.

Backside Application of Acoustic Micro Imaging (AMI) on Plastic Ball Grid Array (PBGA) and Plastic Quad Flat Pack (PQFP) Packages

2004 ◽  
Author(s):  
Luis A. Curiel ◽  
Andrew J. Komrowski ◽  
Daniel J.D. Sullivan
Keyword(s):  
Ball Grid Array ◽  
Acoustic Microscopy ◽  
Electronic Packages ◽  
Nondestructive Technique ◽  
Molding Compound ◽  
Microscopy Technique ◽  
Plastic Ball ◽  
Die Surface ◽  
Plastic Ball Grid Array ◽  
Bond Pads

Abstract Acoustic Micro Imaging (AMI) is an established nondestructive technique for evaluation of electronic packages. Non-destructive evaluation of electronic packages is often a critical first step in the Failure Analysis (FA) process of semiconductor devices [1]. The molding compound to die surface interface of the Plastic Ball Grid Array (PBGA) and Plastic Quad Flat Pack (PQFP) packages is an important interface to acquire for the FA process. Occasionally, with these packages, the standard acoustic microscopy technique fails to identify defects at the molding compound to die surface interface. The hard to identify defects are found at the edge of the die next to the bond pads or under the bonds wires. This paper will present a technique, Backside Acoustic Micro Imaging (BAMI) analysis, which can better resolve the molding compound to die surface interface at the die edge by sending the acoustic signal through the backside of the PBGA and PQFP packages.

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