scholarly journals Temperature-Dependent Impedance Spectra of Nitrogen-Doped Ultrananocrystalline Diamond Films Grown on Si Substrates

IEEE Access ◽  
2021 ◽  
Vol 9 ◽  
pp. 896-904
Author(s):  
Mahmoud Shaban ◽  
Abdelrahman Zkria ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Diamond Films ◽  
Impedance Spectra ◽  
Temperature Dependent ◽  
Nitrogen Doped ◽  
Si Substrates ◽  
Ultrananocrystalline Diamond

Bulk and surface-enhanced Raman spectroscopy of nitrogen-doped ultrananocrystalline diamond films

2006 ◽  
Vol 203 (12) ◽  
pp. 3028-3035 ◽  
Author(s):  
I. I. Vlasov ◽  
V. G. Ralchenko ◽  
E. Goovaerts ◽  
A. V. Saveliev ◽  
M. V. Kanzyuba
Keyword(s):  
Raman Spectroscopy ◽  
Diamond Films ◽  
Surface Enhanced Raman Spectroscopy ◽  
Nitrogen Doped ◽  
Ultrananocrystalline Diamond ◽  
Surface Enhanced ◽  
Surface Enhanced Raman

Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films

2001 ◽  
Vol 79 (10) ◽  
pp. 1441-1443 ◽  
Author(s):  
S. Bhattacharyya ◽  
O. Auciello ◽  
J. Birrell ◽  
J. A. Carlisle ◽  
L. A. Curtiss ◽  
...  
Keyword(s):  
Diamond Films ◽  
Synthesis And Characterization ◽  
Nitrogen Doped ◽  
Ultrananocrystalline Diamond

Engineering the Interface Characteristics of Ultrananocrystalline Diamond Films Grown on Au-Coated Si Substrates

2012 ◽  
Vol 4 (8) ◽  
pp. 4169-4176 ◽  
Author(s):  
Kamatchi Jothiramalingam Sankaran ◽  
Kalpataru Panda ◽  
Balakrishnan Sundaravel ◽  
Huang-Chin Chen ◽  
I-Nan Lin ◽  
...  
Keyword(s):  
Diamond Films ◽  
Si Substrates ◽  
Ultrananocrystalline Diamond ◽  
Interface Characteristics

Vibrational properties of nitrogen-doped ultrananocrystalline diamond films grown by microwave plasma CVD

2007 ◽  
Vol 16 (12) ◽  
pp. 2074-2077 ◽  
Author(s):  
I.I. Vlasov ◽  
E. Goovaerts ◽  
V.G. Ralchenko ◽  
V.I. Konov ◽  
A.V. Khomich ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Vibrational Properties ◽  
Plasma Cvd ◽  
Nitrogen Doped ◽  
Ultrananocrystalline Diamond ◽  
Microwave Plasma Cvd

N-type electric conductivity of nitrogen-doped ultrananocrystalline diamond films

2005 ◽  
Vol 71 (7) ◽  
Author(s):  
Ying Dai ◽  
Dadi Dai ◽  
Cuixia Yan ◽  
Baibiao Huang ◽  
Shenghao Han
Keyword(s):  
Electric Conductivity ◽  
Diamond Films ◽  
Nitrogen Doped ◽  
Ultrananocrystalline Diamond

Highly conductive nitrogen-doped ultrananocrystalline diamond films with enhanced field emission properties: triethylamine as a new nitrogen source

2016 ◽  
Vol 4 (21) ◽  
pp. 4778-4785 ◽  
Author(s):  
Wen Yuan ◽  
Liping Fang ◽  
Zhen Feng ◽  
Zexiang Chen ◽  
Jianwu Wen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Nitrogen Source ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Nitrogen Doped ◽  
Field Emission Properties ◽  
Ultrananocrystalline Diamond

In this study, triethylamine (TEA) dissolved in the methanol was used as a liquid nitrogen source to synthesize nitrogen-doped ultrananocrystalline diamond (N-UNCD) films on silicon substrates via microwave plasma enhanced chemical vapor deposition (MPCVD).

Diode Parameters of Heterojunctions Comprising p-Type Ultrananocrystalline Diamond Films and n-Type Si Substrates

2019 ◽  
Vol 19 (3) ◽  
pp. 1567-1573 ◽  
Author(s):  
Rawiwan Chaleawpong ◽  
Nathaporn Promros ◽  
Peerasil Charoenyuenyao ◽  
Takanori Hanada ◽  
Shinya Ohmagari ◽  
...  
Keyword(s):  
Diamond Films ◽  
Si Substrates ◽  
Ultrananocrystalline Diamond ◽  
P Type

Enhanced Diamond Nucleation by Surface Texturing of Si Substrate in SF6/O2 Plasmas

2013 ◽  
Vol 432 ◽  
pp. 61-65
Author(s):  
Jong Cheon Park ◽  
Ok Geun Jeong ◽  
Sang Youn Kim ◽  
Tae Gyu Kim ◽  
Jin Kon Kim ◽  
...  
Keyword(s):  
Surface Texturing ◽  
Diamond Films ◽  
Nucleation Density ◽  
Si Substrate ◽  
Diamond Nucleation ◽  
Mechanical Abrasion ◽  
Si Substrates ◽  
Ultrananocrystalline Diamond ◽  
Process Pressure ◽  
Density Surface

SF6/O2 plasma surface texturing was employed to pretreat Si substrate for achieving enhanced diamond nucleation density. Surface roughness of the textured Si was found to be strongly dependent on the process pressure and normalized roughness values in the range of 2-16 were obtained. Remarkably enhanced nucleation densities of ~1010 cm-2 compared to conventional mechanical abrasion were obtained after seeding for the surface textured Si substrates. Raman spectroscopy revealed that ultrananocrystalline diamond films with grain size below 10 nm were grown on the surface textured Si.

Charge-based deep level transient spectroscopy of undoped and nitrogen-doped ultrananocrystalline diamond films

2003 ◽  
Vol 12 (10-11) ◽  
pp. 1776-1782 ◽  
Author(s):  
V.I Polyakov ◽  
A.I Rukovishnikov ◽  
N.M Rossukanyi ◽  
V.G Pereverzev ◽  
S.M Pimenov ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Diamond Films ◽  
Nitrogen Doped ◽  
Ultrananocrystalline Diamond ◽  
Transient Spectroscopy
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