scholarly journals Hybrid Entangled States With Multi-Degree of Freedom and High Purity for Internet of Vehicles

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 67456-67465
Author(s):  
Jianjun Guo ◽  
Keqiang Wang ◽  
Fengmei Yu ◽  
Ken Cai
Keyword(s):  
High Purity ◽  
Degree Of Freedom ◽  
Entangled States ◽  
Internet Of Vehicles

Efficient simultaneous dense coding and teleportation with two-photon four-qubit cluster states

2016 ◽  
Vol 14 (05) ◽  
pp. 1650023 ◽  
Author(s):  
Cai Zhang ◽  
Haozhen Situ ◽  
Qin Li ◽  
Guang Ping He
Keyword(s):  
Degrees Of Freedom ◽  
Quantum States ◽  
Degree Of Freedom ◽  
Generation Rate ◽  
Entangled States ◽  
Dense Coding ◽  
Cluster States ◽  
Two Degrees Of Freedom ◽  
Classical Information ◽  
Two Photon

We firstly propose a simultaneous dense coding protocol with two-photon four-qubit cluster states in which two receivers can simultaneously get their respective classical information sent by a sender. Because each photon has two degrees of freedom, the protocol will achieve a high transmittance. The security of the simultaneous dense coding protocol has also been analyzed. Secondly, we investigate how to simultaneously teleport two different quantum states with polarization and path degree of freedom using cluster states to two receivers, respectively, and discuss its security. The preparation and transmission of two-photon four-qubit cluster states is less difficult than that of four-photon entangled states, and it has been experimentally generated with nearly perfect fidelity and high generation rate. Thus, our protocols are feasible with current quantum techniques.

Perfect distribution of four-photon entangled states over an arbitrary collective noise channel by spatial degree of freedom

2013 ◽  
Vol 308 ◽  
pp. 304-308 ◽  
Author(s):  
Li Dong ◽  
Xiao-Ming Xiu ◽  
Hong-Zhi Shen ◽  
Ya-Jun Gao ◽  
X.X. Yi
Keyword(s):  
Degree Of Freedom ◽  
Entangled States ◽  
Collective Noise ◽  
Spatial Degree

scholarly journals NEW ASPECTS OF THE PURITY AND INFORMATION OF AN ENTANGLED QUBIT PAIR

2008 ◽  
Vol 06 (01) ◽  
pp. 187-200 ◽  
Author(s):  
NASSER METWALLY
Keyword(s):  
Electromagnetic Field ◽  
High Purity ◽  
Atomic System ◽  
Photon Number ◽  
The Other ◽  
Entangled States ◽  
Quantum Channels ◽  
Initial State ◽  
The Mean ◽  
Quantized Electromagnetic Field

In this article, we investigate the purity dynamics of entangled 2 two-level atoms interacting with a single quantized electromagnetic field. We show that the purity of the qubit pairs depends on the initial state of the atomic system. It is found that the superposition case is the best choice to generate entangled states with high purity and hence high entanglement. It is clear that the purity of one qubit can be purified at the expense of the other pair through the phenomena of purity swapping. The mean photon number plays an important role in increasing the purity. The robustness of the quantum channel is investigated in the presence of individual attacks, where we study the separability of these channels and evaluate its fidelity. Finally, we use the partial entangled states as quantum channels to perform the original coding protocol. We find that Bob can obtain the coded information with reasonable percentage. The inequality of security is tested, where we determine the interval of times in which Alice and Bob can communicate securely. These intervals depend on the type of error and the structure of the initial atomic system.

Observations oh Nucleation and Growth of Voids in Nickel

1970 ◽  
Vol 28 ◽  
pp. 414-415
Author(s):  
J. L. Brimhall ◽  
H. E. Kissinger ◽  
B. Mastel
Keyword(s):  
High Purity ◽  
Growth Stage ◽  
Elevated Temperatures ◽  
Early Growth ◽  
Nucleation And Growth ◽  
Pure Nickel ◽  
Different Temperatures ◽  
Total Fluence ◽  
Neutron Exposure ◽  
Growth Of Voids

Some information on the size and density of voids that develop in several high purity metals and alloys during irradiation with neutrons at elevated temperatures has been reported as a function of irradiation parameters. An area of particular interest is the nucleation and early growth stage of voids. It is the purpose of this paper to describe the microstructure in high purity nickel after irradiation to a very low but constant neutron exposure at three different temperatures.Annealed specimens of 99-997% pure nickel in the form of foils 75μ thick were irradiated in a capsule to a total fluence of 2.2 × 1019 n/cm2 (E > 1.0 MeV). The capsule consisted of three temperature zones maintained by heaters and monitored by thermocouples at 350, 400, and 450°C, respectively. The temperature was automatically dropped to 60°C while the reactor was down.

Preparation and characterisation of vanadium pentoxide supported rhodium catalyst

1988 ◽  
Vol 46 ◽  
pp. 946-947
Author(s):  
A. Legrouri
Keyword(s):  
Aqueous Solution ◽  
Thermal Decomposition ◽  
Physicochemical Properties ◽  
Surface Area ◽  
Vanadium Pentoxide ◽  
High Purity ◽  
Gas Adsorption ◽  
Rhodium Catalyst ◽  
Optical Methods ◽  
Reducible Oxides

The industrial importance of metal catalysts supported on reducible oxides has stimulated considerable interest during the last few years. This presentation reports on the study of the physicochemical properties of metallic rhodium supported on vanadium pentoxide (Rh/V2O5). Electron optical methods, in conjunction with other techniques, were used to characterise the catalyst before its use in the hydrogenolysis of butane; a reaction for which Rh metal is known to be among the most active catalysts.V2O5 powder was prepared by thermal decomposition of high purity ammonium metavanadate in air at 400 °C for 2 hours. Previous studies of the microstructure of this compound, by HREM, SEM and gas adsorption, showed it to be non— porous with a very low surface area of 6m2/g3. The metal loading of the catalyst used was lwt%Rh on V2Q5. It was prepared by wet impregnating the support with an aqueous solution of RhCI3.3H2O.

High-purity Ge x-ray detectors: Sensitivity factors and usefulness

1990 ◽  
Vol 48 (2) ◽  
pp. 548-548
Author(s):  
E. B. Steel
Keyword(s):  
High Purity ◽  
High Energy ◽  
Quantitative Chemical Analysis ◽  
Detector Performance ◽  
X Ray ◽  
Detector Sensitivity ◽  
Specimen Holder ◽  
Many Instruments ◽  
Charge Resolution ◽  
Sensitivity Factors

High Purity Germanium (HPGe) x-ray detectors are now commercially available for the analytical electron microscope (AEM). The detectors have superior efficiency at high x-ray energies and superior resolution compared to traditional lithium-drifted silicon [Si(Li)] detectors. However, just as for the Si(Li), the use of the HPGe detectors requires the determination of sensitivity factors for the quantitative chemical analysis of specimens in the AEM. Detector performance, including incomplete charge, resolution, and durability has been compared to a first generation detector. Sensitivity factors for many elements with atomic numbers 10 through 92 have been determined at 100, 200, and 300 keV. This data is compared to Si(Li) detector sensitivity factors.The overall sensitivity and utility of high energy K-lines are reviewed and discussed. Many instruments have one or more high energy K-line backgrounds that will affect specific analytes. One detector-instrument-specimen holder combination had a consistent Pb K-line background while another had a W K-line background.

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

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