scholarly journals An Improved Algorithm for Drift Diffusion Transport and Its Application on Large Scale Parallel Simulation of Resistive Random Access Memory Arrays

IEEE Access ◽  
2019 ◽  
Vol 7 ◽  
pp. 31273-31285 ◽  
Author(s):  
Da-Wei Wang ◽  
Wenchao Chen ◽  
Wen-Sheng Zhao ◽  
Guo-Dong Zhu ◽  
Zhen-Guo Zhao ◽  
...  
Keyword(s):  
Large Scale ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Parallel Simulation ◽  
Access Memory ◽  
Drift Diffusion ◽  
Diffusion Transport ◽  
Memory Arrays ◽  
Improved Algorithm

A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation

2014 ◽  
Vol 35 (2) ◽  
pp. 211-213 ◽  
Author(s):  
Haitong Li ◽  
Peng Huang ◽  
Bin Gao ◽  
Bing Chen ◽  
Xiaoyan Liu ◽  
...  
Keyword(s):  
Large Scale ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Memory Array ◽  
Spice Model

Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays

2017 ◽  
Vol 121 (12) ◽  
pp. 7005-7014 ◽  
Author(s):  
Gang Niu ◽  
Xavier Cartoixà ◽  
Alessandro Grossi ◽  
Cristian Zambelli ◽  
Piero Olivo ◽  
...  
Keyword(s):  
Carbon Content ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Residual Carbon ◽  
Access Memory ◽  
Residual Carbon Content ◽  
Memory Arrays

Electrothermal Characterization in 3-D Resistive Random Access Memory Arrays

2016 ◽  
Vol 63 (12) ◽  
pp. 4720-4728 ◽  
Author(s):  
Yandong Luo ◽  
Wenchao Chen ◽  
Mingzhuo Cheng ◽  
Wen-Yan Yin
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Memory Arrays

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Sign in / Sign up

Export Citation Format

Share Document