scholarly journals Data retention investigation in Al:HfO2-based resistive random access memory arrays by using high-temperature accelerated tests

2019 ◽  
Vol 37 (1) ◽  
pp. 012202 ◽  
Author(s):  
Eduardo Perez ◽  
Mamathamba K. Mahadevaiah ◽  
Cristian Zambelli ◽  
Piero Olivo ◽  
Christian Wenger
Keyword(s):  
High Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Accelerated Tests ◽  
Data Retention ◽  
Access Memory ◽  
Memory Arrays

scholarly journals Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 457 ◽  
Author(s):  
Lei Wu ◽  
Hongxia Liu ◽  
Jinfu Lin ◽  
Shulong Wang
Keyword(s):  
Thermal Annealing ◽  
High Performance ◽  
Electrical Characteristic ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
Before And After ◽  
Retention Characteristics

A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfOx/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the device’s cycling endurance and data retention characteristics found that the device had over 1000 erase/write endurance and over 105 s of lifetime (85 °C). The switching mechanisms of the devices before and after annealing were also discussed.

The Influence of Water Absorbed in Grain Boundary of a Polycrystalline NiO Layer on the Memory Characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)

2014 ◽  
Vol 1691 ◽  
Author(s):  
Ryosuke Ogata ◽  
Masataka Yoshihara ◽  
Naohiro Murayama ◽  
Satoru Kishida ◽  
Kentaro Kinoshita
Keyword(s):  
Grain Boundary ◽  
Room Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
Influence Of Water ◽  
Retention Characteristics ◽  
Memory Characteristics

ABSTRACTWe focused on the presence of water absorbed in the grain boundary of a polycrystalline transition metal oxide (TMO) film in an EL/poly-TMO/EL structure. The effect of supplying water to resistive random access memories (ReRAMs) of Pt/NiO/Pt structure on switching voltages and data retention characteristics was investigated. As a result, switching voltages were decreased by supplying water and reset switching was confirmed to be strongly induced by supplying water even at room temperature without applying voltage. These results suggest that water enhances resistive switching effect by providing reducing species and oxidizing species respectively such as H+ and OH-.

Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays

2017 ◽  
Vol 121 (12) ◽  
pp. 7005-7014 ◽  
Author(s):  
Gang Niu ◽  
Xavier Cartoixà ◽  
Alessandro Grossi ◽  
Cristian Zambelli ◽  
Piero Olivo ◽  
...  
Keyword(s):  
Carbon Content ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Residual Carbon ◽  
Access Memory ◽  
Residual Carbon Content ◽  
Memory Arrays

Thermal stability and data retention of resistive random access memory with HfO x /ZnO double layers

2017 ◽  
Vol 26 (8) ◽  
pp. 087305 ◽  
Author(s):  
Yun-Feng Lai ◽  
Fan Chen ◽  
Ze-Cun Zeng ◽  
PeiJie Lin ◽  
Shu-Ying Cheng ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Double Layers ◽  
Data Retention ◽  
Access Memory

Electrothermal Characterization in 3-D Resistive Random Access Memory Arrays

2016 ◽  
Vol 63 (12) ◽  
pp. 4720-4728 ◽  
Author(s):  
Yandong Luo ◽  
Wenchao Chen ◽  
Mingzhuo Cheng ◽  
Wen-Yan Yin
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Memory Arrays
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