scholarly journals Analytical Parameter Extraction for Small-Signal Equivalent Circuit of 3D FinFET Into Sub-THz Range

IEEE Access ◽  
2018 ◽  
Vol 6 ◽  
pp. 19752-19761 ◽  
Author(s):  
Muyang Qin ◽  
Yabin Sun ◽  
Xiaojin Li ◽  
Yanling Shi
Keyword(s):  
Equivalent Circuit ◽  
Parameter Extraction ◽  
Small Signal ◽  
Analytical Parameter ◽  
Thz Range

Direct analytical parameter extraction for SiGe HBTs T-topology small-signal equivalent circuit

2016 ◽  
Vol 94 ◽  
pp. 223-230
Author(s):  
Yabin Sun ◽  
Jun Fu ◽  
Yudong Wang ◽  
Wei Zhou ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Parameter Extraction ◽  
Small Signal ◽  
Analytical Parameter

A rigorous peeling algorithm for direct parameter extraction procedure of HBT small-signal equivalent circuit

2015 ◽  
Vol 85 (3) ◽  
pp. 405-411 ◽  
Author(s):  
Zhang Jincan ◽  
Liu Bo ◽  
Zhang Leiming ◽  
Sun Ligong ◽  
Wang Jinchan ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Extraction Procedure ◽  
Parameter Extraction ◽  
Small Signal

scholarly journals Distributed Small-Signal Equivalent Circuit Model and Parameter Extraction for SiGe HBT

IEEE Access ◽  
2019 ◽  
Vol 7 ◽  
pp. 5865-5873
Author(s):  
Yabin Sun ◽  
Ziyu Liu ◽  
Xiaojin Li ◽  
Yanling Shi
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Parameter Extraction ◽  
Circuit Model ◽  
Small Signal ◽  
Sige Hbt

An analytic method for parameter extraction of InP HBTs small-signal model

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Jincan Zhang ◽  
Min Liu ◽  
Jinchan Wang ◽  
Kun Xu
Keyword(s):  
Equivalent Circuit ◽  
High Speed ◽  
Extraction Procedure ◽  
Parameter Extraction ◽  
Circuit Parameter ◽  
Small Signal ◽  
Current Crowding ◽  
Extraction Technology ◽  
Content Type ◽  
S Parameters

Purpose High-speed Indium Phosphide (InP) HBTs have been widely used to design high-speed analog, digital and mixed-signal integrated circuits. The purpose of this study is to propose a new parameter extraction procedure for determining an improved T-topology small-signal equivalent circuit of InP heterojunction bipolar transistors (HBTs). Design/methodology/approach The alternating current crowding effect is considered through adding the intrinsic base capacitance in the small-signal equivalent circuit. All of the circuit parameters are extracted directly without using any approximation. Findings The extraction technique is more easily understood and clearer than other extraction methods, as the equations are derived from the S-parameters by peeling peripheral elements from small-signal models to get reduced ones and extracting each equivalent-circuit parameter using each equation. Originality/value To validate the presented parameter extraction technology, an n-p-n emitter-up InP HBT was analyzed adopting the method. Excellent agreement between measured and modeled S-parameters is obtained up to 40 GHz.

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