Microwave frequency small-signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT

2017 ◽  
Vol 28 (2) ◽  
pp. e21179 ◽  
Author(s):  
G. Amarnath ◽  
D. K. Panda ◽  
T. R. Lenka
Keyword(s):  
Equivalent Circuit ◽  
Microwave Frequency ◽  
Parameter Extraction ◽  
Circuit Parameter ◽  
Small Signal ◽  
Equivalent Circuit Parameter

An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT

2005 ◽  
Vol 44 (5) ◽  
pp. 456-460
Author(s):  
Han-Yu Chen ◽  
Kun-Ming Chen ◽  
Guo-Wei Huang ◽  
Chun-Yen Chang ◽  
Tiao-Yuan Huang
Keyword(s):  
Equivalent Circuit ◽  
Parameter Determination ◽  
Circuit Parameter ◽  
Small Signal ◽  
Equivalent Circuit Parameter

scholarly journals Equivalent circuit parameter extraction of low‐capacitance high‐damping PTs

2020 ◽  
Vol 56 (7) ◽  
pp. 347-350 ◽  
Author(s):  
J. Forrester ◽  
L. Li ◽  
J.N. Davidson ◽  
M.P. Foster ◽  
D.A. Stone ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Parameter Extraction ◽  
Circuit Parameter ◽  
Low Capacitance ◽  
Equivalent Circuit Parameter

An analytic method for parameter extraction of InP HBTs small-signal model

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Jincan Zhang ◽  
Min Liu ◽  
Jinchan Wang ◽  
Kun Xu
Keyword(s):  
Equivalent Circuit ◽  
High Speed ◽  
Extraction Procedure ◽  
Parameter Extraction ◽  
Circuit Parameter ◽  
Small Signal ◽  
Current Crowding ◽  
Extraction Technology ◽  
Content Type ◽  
S Parameters

Purpose High-speed Indium Phosphide (InP) HBTs have been widely used to design high-speed analog, digital and mixed-signal integrated circuits. The purpose of this study is to propose a new parameter extraction procedure for determining an improved T-topology small-signal equivalent circuit of InP heterojunction bipolar transistors (HBTs). Design/methodology/approach The alternating current crowding effect is considered through adding the intrinsic base capacitance in the small-signal equivalent circuit. All of the circuit parameters are extracted directly without using any approximation. Findings The extraction technique is more easily understood and clearer than other extraction methods, as the equations are derived from the S-parameters by peeling peripheral elements from small-signal models to get reduced ones and extracting each equivalent-circuit parameter using each equation. Originality/value To validate the presented parameter extraction technology, an n-p-n emitter-up InP HBT was analyzed adopting the method. Excellent agreement between measured and modeled S-parameters is obtained up to 40 GHz.

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