Radio frequency integrated circuit technology for low-power wireless communications

1998 ◽  
Vol 5 (3) ◽  
pp. 11-19 ◽  
Author(s):  
L.E. Larson
Keyword(s):  
Wireless Communications ◽  
Low Power ◽  
Radio Frequency ◽  
Integrated Circuit ◽  
Circuit Technology

Low-Power SiGe HBT and Circuit Technology for Future Quasi-Millimeter-Wave Wireless Communications

2019 ◽  
Vol 25 (7) ◽  
pp. 137-150
Author(s):  
Katsuyoshi Washio ◽  
Nobuhiro Shiramizu ◽  
Makoto Miura ◽  
Takahiro Nakamura ◽  
Katsuya Oda ◽  
...  
Keyword(s):  
Wireless Communications ◽  
Low Power ◽  
Millimeter Wave ◽  
Sige Hbt ◽  
Circuit Technology

scholarly journals Terahertz Frequency Comb in Graphene Field-Effect Transistors

2020 ◽  
Vol 233 ◽  
pp. 03006
Author(s):  
Pedro Cosme
Keyword(s):  
Low Power ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Frequency Comb ◽  
Hydrodynamic Instability ◽  
Drain Current ◽  
Power Radiation ◽  
New Generation ◽  
Circuit Technology

Graphene Field-effect transistors (GFETs) are excellent candidates for all-electric, low-power radiation sources and detectors based on integrated circuit technology. In this work, we show that a hydrodynamic instability can be ex¬plored (the Dyakonov–Shur instability) to excite the graphene plasmons. The instability can be sustained with the help of a source-to-drain current and con¬trolled with the gate voltage. It is shown that the plasmons radiate a frequency comb in the Terahertz (THz) range. It is argued how this can pave the stage for a new generation of low power THz sources in integrated-circuit technology.

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