A low-noise, low-power CMOS SOI readout front-end for silicon detector leakage current compensation with capability

2001 ◽  
Vol 48 (8) ◽  
pp. 1022-1030 ◽  
Author(s):  
Y. Hu ◽  
G. Deptuch ◽  
R. Turchetta ◽  
C. Guo
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
Silicon Detector ◽  
Low Noise ◽  
Current Compensation ◽  
Front End ◽  
Low Power Cmos

scholarly journals Low noise low power readout circuit for soft X ray detection

2003 ◽  
Vol 1 (03) ◽  
Author(s):  
A. Cerdeira-Estrada ◽  
A. De Luca ◽  
A. Cuttin ◽  
R. Mutihac
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Theoretical Calculations ◽  
Silicon Detector ◽  
Low Noise ◽  
Experimental Results ◽  
X Rays ◽  
Readout Circuit ◽  
X Ray ◽  
Low Power Cmos

A new low power CMOS ASIC for the detection of X-rays was optimized for low power and low noise. Theoretical calculations and optimizations are presented and compared with experimental results. Noise as low as 120+25*Cin [pF] ENC rms was obtained including a silicon detector of 1.3 pF and 0.3nA of leakage. The power consumption is less than 100 W. Other circuit parameters are also shown.

A fully integrated low-power CMOS particle detector front-end for space applications

1998 ◽  
Vol 45 (4) ◽  
pp. 2272-2278 ◽  
Author(s):  
J. Vandenbussche ◽  
F. Leyn ◽  
G. Van der Plas ◽  
G. Gielen ◽  
W. Sansen
Keyword(s):  
Low Power ◽  
Particle Detector ◽  
Space Applications ◽  
Fully Integrated ◽  
Front End ◽  
Low Power Cmos

scholarly journals Ultra-Low Power CMOS Readout for Resonant MEMS Strain Sensors

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 973
Author(s):  
Marco Crescentini ◽  
Cinzia Tamburini ◽  
Luca Belsito ◽  
Aldo Romani ◽  
Alberto Roncaglia ◽  
...  
Keyword(s):  
Low Power ◽  
Power Supply ◽  
First Generation ◽  
Negative Resistance ◽  
Low Noise ◽  
Strain Sensors ◽  
Current Conveyors ◽  
Ultra Low Power ◽  
Active Elements ◽  
Low Power Cmos

This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on first-generation current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low-noise. A prototype of the circuit was implemented in a 0.18-µm technology occupying less than 0.4 mm2 and consuming only 9 µA from the 1.8-V power supply. The prototype was earliest tested by connecting it to a resonant MEMS strain resonator.

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