Low-cost combustion chemical vapor deposition of epitaxial buffer layers and superconductors

1999 ◽  
Vol 9 (2) ◽  
pp. 2426-2429 ◽  
Author(s):  
S.S. Shoup ◽  
S. Shanmugham ◽  
D. Cousins ◽  
A.T. Hunt ◽  
M. Paranthaman ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Cost ◽  
Chemical Vapor ◽  
Buffer Layers

scholarly journals The Progress on Low-Cost, High-Quality, High-Temperature Superconducting Tapes Deposited by the Combustion Chemical Vapor Deposition Process

2001 ◽  
Vol 689 ◽  
Author(s):  
Shara S. Shoup ◽  
Marvis K. White ◽  
Steve L. Krebs ◽  
Natalie Darnell ◽  
Adam C. King ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Critical Current Density ◽  
Buffer Layer ◽  
Critical Current ◽  
Vapor Deposition ◽  
Low Cost ◽  
Chemical Vapor ◽  
High Critical Current Density ◽  
High Quality

ABSTRACTThe innovative Combustion Chemical Vapor Deposition (CCVD) process is a non-vacuum technique that is being investigated to enable next generation products in several application areas including high-temperature superconductors (HTS). In combination with the Rolling Assisted Biaxially Textured Substrate (RABiTS) technology, the CCVD process has significant promise to provide low-cost, high-quality lengths of YBCO coated conductor. The CCVD technology has been used to deposit both buffer layer coatings as well as YBCO superconducting layers. A buffer layer architecture of strontium titanate and ceria have been deposited by CCVD on textured nickel substrates and optimized to appropriate thicknesses and microstructures to provide templates for growing PLD YBCO with high critical current density values. The CCVD buffer layers have been scaled to meter plus lengths with good epitaxial uniformity along the length. A short sample cut from one of the lengths enabled high critical current density PLD YBCO. Films of CCVD YBCO superconductors have been grown on single crystal substrates with critical current densities over 1 MA/cm2. Work is currently in progress to combine both the buffer layer and superconductor technologies to produce high-quality coupons of HTS tape made entirely by the non-vacuum CCVD process.

A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation

CrystEngComm ◽  
2020 ◽  
Vol 22 (1) ◽  
pp. 130-141
Author(s):  
Prerna Chauhan ◽  
S. Hasenöhrl ◽  
Ľ. Vančo ◽  
P. Šiffalovič ◽  
E. Dobročka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Memory Effect ◽  
Systematic Study ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molar Fraction ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Mocvd Reactor ◽  
Metalorganic Chemical

Thick InAlN layers (In-molar fraction >0.37) on GaN buffer layers were prepared using a close-coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor.

Copper Oxide Buffer Layers by Pulsed‐Chemical Vapor Deposition for Semitransparent Perovskite Solar Cells

2020 ◽  
pp. 2001482 ◽  
Author(s):  
Taeyong Eom ◽  
Songhee Kim ◽  
Raphael E. Agbenyeke ◽  
Hyunmin Jung ◽  
Seon Min Shin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Copper Oxide ◽  
Vapor Deposition ◽  
Perovskite Solar Cells ◽  
Chemical Vapor ◽  
Buffer Layers

Low-Energy Plasma Enhanced Chemical Vapor Deposition

1998 ◽  
Vol 533 ◽  
Author(s):  
Carsten Rosenblad ◽  
Thomas Graf ◽  
Alex Dommann ◽  
Hans Von känel
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Energy ◽  
Buffer Layers ◽  
Surface Kinetics ◽  
Speed Up ◽  
Reactive Gases ◽  
Substrate Temperatures

AbstractWe discuss a new method for plasma enhanced chemical vapor deposition, applied to the epitaxial growth of Si and of Si-Ge heterostructures. Growth rates up to 5 nm/s become possible at substrate temperatures below 600°C, by utilizing very intense but low energy plasmas to crack the reactive gases, SiH4 and GeH4, and to speed up the surface kinetics. The method is applied to the synthesis of step-graded Si-Ge buffer layers, exhibiting the well known cross-hatched surface morphology.

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