Low-Energy Plasma Enhanced Chemical Vapor Deposition

1998 ◽  
Vol 533 ◽  
Author(s):  
Carsten Rosenblad ◽  
Thomas Graf ◽  
Alex Dommann ◽  
Hans Von känel
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Energy ◽  
Buffer Layers ◽  
Surface Kinetics ◽  
Speed Up ◽  
Reactive Gases ◽  
Substrate Temperatures

AbstractWe discuss a new method for plasma enhanced chemical vapor deposition, applied to the epitaxial growth of Si and of Si-Ge heterostructures. Growth rates up to 5 nm/s become possible at substrate temperatures below 600°C, by utilizing very intense but low energy plasmas to crack the reactive gases, SiH4 and GeH4, and to speed up the surface kinetics. The method is applied to the synthesis of step-graded Si-Ge buffer layers, exhibiting the well known cross-hatched surface morphology.

In-Situ Growth of C-Axis Oriented YBa2Cu3O7−x on Silicon with Composite Buffer Layers by Plasma Enhanced Metalorganic Chemical Vapor Deposition

1992 ◽  
Vol 275 ◽  
Author(s):  
Jiming Zhang ◽  
Robin Gardiner ◽  
Peter S. Kirlin
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Metal Organic ◽  
Zero Resistance ◽  
Substrate Temperatures

ABSTRACTYBa2Cu3O7−x thin films have been grown in-situ on Si (100) with a composite buffer layer of Pt/Ta/ONO (ONO stands for a S1O2 / Si3N4 /SiO2 trilayer) by plasma enhanced metal organic chemical vapor deposition (PE-MOCVD). X-ray diffraction measurements indicate that c-axis oriented YBa2Cu3O7−x films are formed in-situ at substrate temperatures as low as 650 °C on Pt/Ta/ONO/Si. The composite P/Ta/ONO provided an adherent metallic interlayer and effectively prevented the interaction between YBa2Cu3O7−x and Si. Four probe resistivity measurements indicate the onset of superconductivity at 92 K and achieved zero resistance at 65 K.

Copper Chemical Vapor Deposition using a Novel Cu(II) Precursor for Contact Via Filling Process

2007 ◽  
Vol 990 ◽  
Author(s):  
Hideaki Zama ◽  
Yuuji Nishimura ◽  
Michiyo Yago ◽  
Mikio Watanabe
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hydrogen Reduction ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
Cu Films ◽  
Pure Cu ◽  
Substrate Temperatures ◽  
Advanced Generation

ABSTRACTChemical vapor deposition (CVD) of copper using both a novel Cu(II) β-diketonate source and hydrogen reduction process was studied to fill contact vias with the smallest diameter in the 32nm and more advanced generation chip. Pure Cu films were grown under the condition with the product of hydrogen partial pressure and H2/Cu source molar ratio being over 1,000,000. We succeeded in filling the 40-nm-diameter contact vias by optimizing the growth condition of the Cu-CVD in both substrate temperatures and reaction pressures.

Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology

2018 ◽  
Vol 667 ◽  
pp. 48-54
Author(s):  
Adreen Azman ◽  
Ahmad Shuhaimi ◽  
Al-Zuhairi Omar ◽  
Anas Kamarundzaman ◽  
Muhammad Imran Mustafa Abdul Khudus ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Enhanced Surface

scholarly journals Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1999 ◽  
Vol 4 (S1) ◽  
pp. 634-641 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

Surface morphology and preferential orientation growth of TaC crystals formed by chemical vapor deposition

2009 ◽  
Vol 517 (11) ◽  
pp. 3235-3239 ◽  
Author(s):  
Xiang Xiong ◽  
Zhao-ke Chen ◽  
Bai-yun Huang ◽  
Guo-dong Li ◽  
Feng Zheng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Preferential Orientation ◽  
Orientation Growth
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