Improvement in switching characteristics of HTS power electric device prepared by pulsed laser deposition

1997 ◽  
Vol 7 (2) ◽  
pp. 1447-1450 ◽  
Author(s):  
Y. Yamagata ◽  
K. Shingai ◽  
T. Ikegami ◽  
K. Ebihara ◽  
N. Inoue
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Electric Device ◽  
Switching Characteristics

Resistive switching characteristics of Dy2O3 film with a Pt nanocrystal embedding layer formed by pulsed laser deposition

Rare Metals ◽  
2013 ◽  
Vol 33 (1) ◽  
pp. 75-79 ◽  
Author(s):  
Hong-Bin Zhao ◽  
Hai-Ling Tu ◽  
Feng Wei ◽  
Xin-Qiang Zhang ◽  
Yu-Hua Xiong ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Resistive Switching ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Switching Characteristics

scholarly journals Resistive Switching Characteristics in TiO2/LaAlO3Heterostructures Sandwiched in Pt Electrodes

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Yuyuan Cao ◽  
Qitao Di ◽  
Lin Zhu ◽  
Aidong Li ◽  
Di Wu
Keyword(s):  
Pulsed Laser Deposition ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Pulsed Laser ◽  
Resistance Ratio ◽  
Laser Deposition ◽  
Si Substrates ◽  
Preferential Formation ◽  
Pt Electrodes ◽  
Switching Characteristics

TiO2/LaAlO3(TiO2/LAO) heterostructures have been deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. Resistive switching characteristics of Pt/TiO2/LAO/Pt have been studied and discussed in comparison with those of Pt/TiO2/Pt. It is observed that the switching uniformity and the ON/OFF resistance ratio can be greatly improved by introducing the LAO layer. The observed resistive switching characteristics are discussed as a function of LAO thickness and explained by the preferential formation and rupture of conductive filaments, composed of oxygen vacancies, in the LAO layer.

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

Pulsed laser deposition of relaxor ferroelectric films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-261-Pr9-264
Author(s):  
M. Tyunina ◽  
J. Levoska ◽  
A. Sternberg ◽  
V. Zauls ◽  
M. Kundzinsh ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Relaxor Ferroelectric ◽  
Laser Deposition ◽  
Ferroelectric Films
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