scholarly journals Resistive Switching Characteristics in TiO2/LaAlO3Heterostructures Sandwiched in Pt Electrodes

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Yuyuan Cao ◽  
Qitao Di ◽  
Lin Zhu ◽  
Aidong Li ◽  
Di Wu
Keyword(s):  
Pulsed Laser Deposition ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Pulsed Laser ◽  
Resistance Ratio ◽  
Laser Deposition ◽  
Si Substrates ◽  
Preferential Formation ◽  
Pt Electrodes ◽  
Switching Characteristics

TiO2/LaAlO3(TiO2/LAO) heterostructures have been deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. Resistive switching characteristics of Pt/TiO2/LAO/Pt have been studied and discussed in comparison with those of Pt/TiO2/Pt. It is observed that the switching uniformity and the ON/OFF resistance ratio can be greatly improved by introducing the LAO layer. The observed resistive switching characteristics are discussed as a function of LAO thickness and explained by the preferential formation and rupture of conductive filaments, composed of oxygen vacancies, in the LAO layer.

Resistive switching characteristics of Dy2O3 film with a Pt nanocrystal embedding layer formed by pulsed laser deposition

Rare Metals ◽  
2013 ◽  
Vol 33 (1) ◽  
pp. 75-79 ◽  
Author(s):  
Hong-Bin Zhao ◽  
Hai-Ling Tu ◽  
Feng Wei ◽  
Xin-Qiang Zhang ◽  
Yu-Hua Xiong ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Resistive Switching ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Switching Characteristics

Effect of Y-Doping on the Dielectric Properties of BatiO3 Films Deposited in Reducing Atmospheres Using Pulsed Laser Deposition

1999 ◽  
Vol 596 ◽  
Author(s):  
Won-Youl Choi ◽  
Yoed Tsur ◽  
Clive A. Randall ◽  
Susan Trolier-McKinstry
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Vacancies ◽  
Pulsed Laser ◽  
Dielectric Constants ◽  
Laser Deposition ◽  
Working Pressure ◽  
Si Substrates ◽  
Electrical Degradation ◽  
Multilayer Capacitors ◽  
Mobile Charges

AbstractBaTiO3-based multilayer capacitors with Ni electrodes are fired at low Po2 to prevent the oxidation of Ni. Amphoteric dopants such as Y, Ho and Dy are used to prevent electrical degradation due to oxygen vacancy migration. This paper describes use of this approach in preparing thin film BaTiO3 capacitors. Tolerance of reducing atmospheres is particularly important in films which are co-processed with resistors such as TaN for integrated resistor-capacitor networks. To assess this approach, films with and without Y-doping were grown in pure N2 atmospheres by pulsed laser deposition from undoped and 0.2wt% Y2O3 doped BaTiO3 targets, respectively. Films were deposited onto Pt/Ti/SiO2/Si substrates using a 5∼10Hz laser repetition rate, an energy density of 4.2J/cm2 and a working pressure of 100mTorr. It was found that polycrystalline perovskite films could be grown at 700°C and that Y-doped films had better crystallinity than the undoped ones. The dielectric constants of films without and with Y-doping are ∼1100 and ∼1300 at lkHz, respectively. The dielectric losses of Y-doped films were lower than for undoped films, possibly because the concentration of mobile charges including oxygen vacancies was decreased. Y-doped films also have a smaller coercive field (25kV/cm) and higher maximum polarization (∼20μC/cm2) than undoped films. The defect chemistry of the system is also discussed.

Excimer pulsed laser deposition and annealing of YSZ nanometric films on Si substrates

2005 ◽  
Vol 248 (1-4) ◽  
pp. 270-275 ◽  
Author(s):  
A.P. Caricato ◽  
G. Barucca ◽  
A. Di Cristoforo ◽  
G. Leggieri ◽  
A. Luches ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Si Substrates
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