Electrical transport and resistance switching characteristics of BiFeO3/Nb:SrTiO3/GaAs heterostructure fabricated by pulsed laser deposition

2014 ◽  
Vol 105 (6) ◽  
pp. 062904 ◽  
Author(s):  
W. Huang ◽  
J. J. Yang ◽  
G. Y. Gao ◽  
Y. Lei ◽  
J. Zhu ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Electrical Transport ◽  
Pulsed Laser ◽  
Resistance Switching ◽  
Laser Deposition ◽  
Switching Characteristics

Ca2RuO4Thin Film Growth by Pulsed Laser Deposition

2004 ◽  
Vol 819 ◽  
Author(s):  
Xu Wang ◽  
Yan Xin ◽  
Hanoh Lee ◽  
Patricia A. Stampe ◽  
Robin J. Kennedy ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electrical Transport ◽  
Film Growth ◽  
Pulsed Laser ◽  
High Sensitivity ◽  
Laser Deposition ◽  
Chemical Doping ◽  
Bulk Single Crystal ◽  
Electrical Transport Properties

AbstractBulk Ca2RuO4 is an antiferromagnetic Mott insulator with the metal-insulator transition above room temperature, and the Neel temperature at 113 K. There is strong coupling between crystal structures and magnetic, electronic phase transitions in this system. It exhibits high sensitivity to chemical doping and pressure that makes it very interesting material to study. We have epitaxially grown Ca2RuO4 thin films on LaAlO3 substrates by pulsed laser deposition technique. Growth conditions such as substrate temperature and O2 pressure were systematically varied in order to achieve high quality single-phase film. Crystalline quality and orientation of these films were characterized by X-ray diffractometry. Microstructure of the thin films was examined by transmission electron microscopy. The electrical transport properties were also measured and compared with bulk single crystal.

Electrical Properties of Ag/In2O3/M (M = LaNiO3, Pt) Devices for RRAM Applications

2013 ◽  
Vol 209 ◽  
pp. 94-97
Author(s):  
Bhaumik V. Mistry ◽  
Utpal S. Joshi ◽  
S.J. Trivedi ◽  
U.N. Trivedi ◽  
R. Pinto
Keyword(s):  
Bottom Electrode ◽  
Pulsed Laser ◽  
Grazing Incidence ◽  
Resistance Switching ◽  
Binary Oxide ◽  
Laser Deposition ◽  
Oxide Materials ◽  
Cross Sectional ◽  
New Class ◽  
Switching Characteristics

Resistance switching properties of nanostructured In2Subscript textO3 films grown on Pt and LaNiO3 (LNO) bottom electrodes have been investigated. High quality In2O3/LNO/SiO2 and In2O3/Pt/Ti/SiO2/Si heterostructures were grown by pulsed laser deposition. High purity Ag was thermally evaporated on In2O3 active layer to form top electrode. The Ag/In2O3/M (M = LNO, Pt) structure was characterized by grazing incidence XRD, AFM and cross sectional SEM. Pollycrystalline growth of oxides LNO and In2O3 was confirmed by GIXRD, where as AFM show nanostructured growth with smooth surface morphology. Two terminal I-V characteristics showed reproducible hysteresis suggesting two distinct resistance states in the film. Typical resistance switching ratio (Ron/Roff) of the order of 113 % and 72% have been estimated for In2O3 device grown on LNO and Pt substrates, respectively. The observed resistance switching characteristics offers lot of promise for new class of binary oxide materials with oxide (LNO) as bottom electrode leading to better suitability for nanoelectronics RRAM devices.

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