Large signal model for analysis and design of HEMT gate mixer

1994 ◽  
Vol 4 (12) ◽  
pp. 405-407 ◽  
Author(s):  
R. Allam ◽  
C. Kolanowski ◽  
D. Theron ◽  
Y. Crosnier
Keyword(s):  
Large Signal ◽  
Signal Model ◽  
Analysis And Design

Analysis and Design of Conditioning Circuitry Used for Energy Scavenging Device

2012 ◽  
Vol 229-231 ◽  
pp. 983-986
Author(s):  
Yan Cheng ◽  
Chun Hui Yu ◽  
Jin Xin Huang ◽  
Li Zhang
Keyword(s):  
Wireless Sensors ◽  
Energy Scavenging ◽  
Large Signal ◽  
Signal Model ◽  
Dormant Period ◽  
Dynamic Disturbance ◽  
Analysis And Design ◽  
Equivalent Impedance ◽  
Simulation Based ◽  
Disturbance Model

Energy scavenging device used for smart grid can achieve energy from electromagnetic field and convert it into electricity to power wireless sensors within substations. Due to the energy collected by the energy scavenging unit is unstable, a conditioning circuitry is essential. A conditioning circuitry is proposed, and modeling method is also established accordingly. Both large-signal model and dynamic disturbance model of the topology are presented as to analyze the static and dynamic characteristics. Remarkably, one duty cycle of the sensors is divided into the launch period and dormant period. At different period, their equivalent impedance is different, so the performance of conditioning circuit at different stages is analyzed. To realize it, a feedback control circuit should be considered in the design of the topology. Further, simulation based on PSIM is done to certify effectiveness of the proposed topology and optimized parameters.

MESFET large-signal model based on small-signal measurements for time-domain CAD

1988 ◽  
Vol 24 (15) ◽  
pp. 973 ◽  
Author(s):  
A. Ouslimani ◽  
G. Vernet ◽  
J.C. Henaux ◽  
P. Crozat ◽  
R. Adde
Keyword(s):  
Time Domain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Model ◽  
Model Based

Large-signal model of pulsed power load for analysis of dynamic voltage and frequency

2020 ◽  
Vol 14 (12) ◽  
pp. 2271-2281
Author(s):  
Jun Yan ◽  
Jinquan Wang ◽  
Ying Chen ◽  
Kefeng Huang ◽  
Chen Shen
Keyword(s):  
Pulsed Power ◽  
Large Signal ◽  
Signal Model ◽  
Power Load ◽  
Dynamic Voltage

scholarly journals Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 263
Author(s):  
Roberto Quaglia
Keyword(s):  
Power Amplifier ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Large Signal ◽  
Signal Model ◽  
Or Efficiency ◽  
Summary Table ◽  
Matching Networks ◽  
Amplifier Design ◽  
Frequency Power

In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).

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