MESFET large-signal model based on small-signal measurements for time-domain CAD

1988 ◽  
Vol 24 (15) ◽  
pp. 973 ◽  
Author(s):  
A. Ouslimani ◽  
G. Vernet ◽  
J.C. Henaux ◽  
P. Crozat ◽  
R. Adde
Keyword(s):  
Time Domain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Model ◽  
Model Based

scholarly journals Modeling and Control of Double-Sided LCC Compensation Topology with Semi-Bridgeless Active Rectifier for Inductive Power Transfer System

Energies ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3921
Author(s):  
Cha ◽  
Kim ◽  
Park ◽  
Choi
Keyword(s):  
Steady State ◽  
Equivalent Circuit ◽  
Small Signal ◽  
Power Transfer ◽  
Large Signal ◽  
Signal Model ◽  
Worst Case ◽  
Inductive Power Transfer ◽  
Active Rectifier ◽  
Inductive Power

This paper proposes the modeling and design of a controller for an inductive power transfer (IPT) system with a semi-bridgeless active rectifier (S-BAR). This system consists of a double-sided Inductor-Capacitor-Capacitor (LCC) compensation network and an S-BAR, and maintains a constant output voltage under load variation through the operation of the rectifier switches. Accurate modeling is essential to design a controller with good performance. However, most of the researches on S-BAR have focused on the control scheme for the rectifier switches and steady-state analysis. Therefore, modeling based on the extended describing function is proposed for an accurate dynamic analysis of an IPT system with an S-BAR. Detailed mathematical analyses of the large-signal model, steady-state operating solution, and small-signal model are provided. Nonlinear large-signal equivalent circuit and linearized small-signal equivalent circuit are presented for intuitive understanding. In addition, worst case condition is selected under various load conditions and a controller design process is provided. To demonstrate the effectiveness of the proposed modeling, experimental results using a 100 W prototype are presented.

scholarly journals Unusual Response of Thin LiTaO3 Films to Intense Microwave Pulses

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3588
Author(s):  
Haojia Chen ◽  
Qiong Gao ◽  
Baoliang Qian ◽  
Lishan Zhao
Keyword(s):  
Nonlinear Behaviour ◽  
Small Signal ◽  
Large Signal ◽  
Signal Model ◽  
Small Signal Model ◽  
Wide Range ◽  
Microwave Pulses ◽  
Intense Fields ◽  
Voltage Signal ◽  
Wave Sensors

Fundamentally different responses of a LiTaO 3 thin film detector are observed when it is subjected to short microwave pulses as the pulse intensity is altered over a wide range. We start from weak microwave pulses which lead to only trivial pyroelectric peak response. However, when the microwave pulses become intense, the normally expected pyroelectric signal seems to be suppressed and the sign of the voltage signal can even be completely changed. Analysis indicates that while the traditional pyroelectric model, which is a linear model and works fine for our data in the small regime, it does not work anymore in the large signal regime. Since the small-signal model is the key foundation of electromagnetic-wave sensors based on pyroelectric effects, such as pyroelectric infrared detecters, the observation in this work suggests that one should be cautious when using these devices in intense fields. In addition, the evolution of detector signal with respect to excitation strength suggests that the main polarisation process is changed in the large signal regime. This is of fundamental importance to the understanding on how crystalline solids interact with intense microwaves. Possible causes of the nonlinear behaviour is discussed.

Small- and large-signal modeling of InP HBTs in transferred-substrate technology

2014 ◽  
Vol 6 (3-4) ◽  
pp. 243-251 ◽  
Author(s):  
Tom K. Johansen ◽  
Matthias Rudolph ◽  
Thomas Jensen ◽  
Tomas Kraemer ◽  
Nils Weimann ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Parameter Extraction ◽  
Small Signal ◽  
Current Crowding ◽  
Signal Modeling ◽  
Large Signal ◽  
Signal Model ◽  
Small Signal Model ◽  
Starting Point ◽  
Equivalent Circuit Parameters

In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing a direct parameter extraction methodology dedicated to III–V based HBTs. It is shown that the modeling of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed large-signal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies.

scholarly journals Small-signal analysis of a single-stage bridgeless boost half-bridge AC/DC converter with bidirectional switch

2021 ◽  
Vol 12 (4) ◽  
pp. 2358
Author(s):  
Mohamad Affan Bin Mohd Noh ◽  
Mohd Rodhi Bin Sahid ◽  
Thang Ka Fei ◽  
Ravi Lakshmanan
Keyword(s):  
Steady State ◽  
Signal Analysis ◽  
Circuit Simulation ◽  
Single Stage ◽  
Small Signal ◽  
Large Signal ◽  
Signal Model ◽  
Matlab Simulink ◽  
Small Signal Analysis ◽  
Small Signal Model

A small-signal analysis of a single-stage bridgeless boost half-bridge alternating current/direct current (AC/DC) Converter with bidirectional switches is performed using circuit averaging method. The comprehensive approach to develop the small signal model from the steady state analysis is discussed. The small-signal model is then simulated with MATLAB Simulink. The small-signal model is verified through the comparison of the bode-plot obtained from MATLAB Simulink and the simulated large signal model in piecewise linear electrical circuit simulation (PLECS). The mathematical model obtain from the small-signal analysis is then used to determine the proportional gain K_p and integral gain K_i. In addition, the switch large-signal model is developed by considering the current and voltage waveforms during load transients and steady-state conditions.

The Study of Traveling Wave Tube Large Signal Model Based on Machine Learning

2021 ◽  
Author(s):  
Niankang Li ◽  
Hairong Yin ◽  
Zhuoyun Li ◽  
Dongdong Jia ◽  
Zhang Shen ◽  
...  
Keyword(s):  
Machine Learning ◽  
Traveling Wave ◽  
Traveling Wave Tube ◽  
Wave Tube ◽  
Large Signal ◽  
Signal Model ◽  
Model Based
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