A fully analytical AC large-signal model of the GaAs MESFET for nonlinear network analysis and design

1988 ◽  
Vol 36 (1) ◽  
pp. 61-67 ◽  
Author(s):  
A. Madjar
Keyword(s):  
Network Analysis ◽  
Large Signal ◽  
Signal Model ◽  
Analysis And Design ◽  
Nonlinear Network ◽  
Gaas Mesfet

Large-signal model predicts dynamic behavior of GaAs MESFET model under optical illumination

2001 ◽  
Vol 29 (1) ◽  
pp. 25-31 ◽  
Author(s):  
J. M. Zamanillo ◽  
C. Navarro ◽  
C. Pérez-Vega ◽  
A. Mediavilla ◽  
A. Tazón
Keyword(s):  
Dynamic Behavior ◽  
Large Signal ◽  
Signal Model ◽  
Gaas Mesfet

Large signal model for analysis and design of HEMT gate mixer

1994 ◽  
Vol 4 (12) ◽  
pp. 405-407 ◽  
Author(s):  
R. Allam ◽  
C. Kolanowski ◽  
D. Theron ◽  
Y. Crosnier
Keyword(s):  
Large Signal ◽  
Signal Model ◽  
Analysis And Design

Analysis and Design of Conditioning Circuitry Used for Energy Scavenging Device

2012 ◽  
Vol 229-231 ◽  
pp. 983-986
Author(s):  
Yan Cheng ◽  
Chun Hui Yu ◽  
Jin Xin Huang ◽  
Li Zhang
Keyword(s):  
Wireless Sensors ◽  
Energy Scavenging ◽  
Large Signal ◽  
Signal Model ◽  
Dormant Period ◽  
Dynamic Disturbance ◽  
Analysis And Design ◽  
Equivalent Impedance ◽  
Simulation Based ◽  
Disturbance Model

Energy scavenging device used for smart grid can achieve energy from electromagnetic field and convert it into electricity to power wireless sensors within substations. Due to the energy collected by the energy scavenging unit is unstable, a conditioning circuitry is essential. A conditioning circuitry is proposed, and modeling method is also established accordingly. Both large-signal model and dynamic disturbance model of the topology are presented as to analyze the static and dynamic characteristics. Remarkably, one duty cycle of the sensors is divided into the launch period and dormant period. At different period, their equivalent impedance is different, so the performance of conditioning circuit at different stages is analyzed. To realize it, a feedback control circuit should be considered in the design of the topology. Further, simulation based on PSIM is done to certify effectiveness of the proposed topology and optimized parameters.

A Large-Signal Model for the GaAs MESFET

1981 ◽  
Vol 29 (8) ◽  
pp. 781-788 ◽  
Author(s):  
A. Madjar ◽  
F.J. Rosenbaum
Keyword(s):  
Large Signal ◽  
Signal Model ◽  
Gaas Mesfet

MESFET large-signal model based on small-signal measurements for time-domain CAD

1988 ◽  
Vol 24 (15) ◽  
pp. 973 ◽  
Author(s):  
A. Ouslimani ◽  
G. Vernet ◽  
J.C. Henaux ◽  
P. Crozat ◽  
R. Adde
Keyword(s):  
Time Domain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Model ◽  
Model Based

Large-signal model of pulsed power load for analysis of dynamic voltage and frequency

2020 ◽  
Vol 14 (12) ◽  
pp. 2271-2281
Author(s):  
Jun Yan ◽  
Jinquan Wang ◽  
Ying Chen ◽  
Kefeng Huang ◽  
Chen Shen
Keyword(s):  
Pulsed Power ◽  
Large Signal ◽  
Signal Model ◽  
Power Load ◽  
Dynamic Voltage
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