Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers

2000 ◽  
Vol 12 (2) ◽  
pp. 131-133 ◽  
Author(s):  
M.R. Gokhale ◽  
P.V. Studenkov ◽  
J. Wei ◽  
S.R. Forrest
Keyword(s):  
Quantum Well ◽  
High Efficiency ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Low Threshold

Theoretical investigation on quantum well lasers with extremely low vertical beam divergence and low threshold current

1998 ◽  
Vol 83 (1) ◽  
pp. 8-14 ◽  
Author(s):  
G. W. Yang ◽  
J. Y. Xu ◽  
Z. T. Xu ◽  
J. M. Zhang ◽  
L. H. Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Theoretical Investigation ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Beam Divergence ◽  
Vertical Beam ◽  
Low Threshold

QUANTUM WELL LASERS AND THEIR APPLICATIONS

1996 ◽  
Vol 07 (03) ◽  
pp. 373-381
Author(s):  
LIANGHUI CHEN
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Mainland China ◽  
Optical Fiber Communication ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Material System ◽  
High Modulation ◽  
Low Threshold

Quantum well lasers have attracted a great deal of attention by their many advantages such as low threshold current density, excellent temperature feature, high modulation rate and wavelength adjustability etc. The investigation on quantum well laser in mainland China started in the early 80s. AlGaAs/GaAs QW laser diode and InGaAs/GaAs strained layer QW laser diode have been developed using MBE technology with extremely low threshold current and high T0. Now the growth technologies for QW structure have been expanded to MOCVD technology. Emission wavelengths, on longer wavelength sides have been expanded up to 1.3 µm and 1.55 µm with InGaAsP/InP material system for application in optical fiber communication. On shorter wavelength sides, the emission wavelength has been expanded to lower than 670 nm, for applications in optical information processing. The characteristics of these devices will be demonstrated in this paper. The QW-DFB LD and low-dimension quantum wire and quantum dot lasers are under investigation.

Low threshold current high-temperature operation of InGaAs/AlGaAs strained-quantum-well lasers

1992 ◽  
Vol 4 (11) ◽  
pp. 1189-1191 ◽  
Author(s):  
P.L. Derry ◽  
H.E. Hager ◽  
K.C. Chiu ◽  
D.J. Booher ◽  
E.C. Miao ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Low Threshold ◽  
Strained Quantum Well ◽  
High Temperature Operation

Extremely Low-Threshold Current Density InGaAs/AlGaAs Quantum-Well Lasers on Silicon

2015 ◽  
Vol 33 (15) ◽  
pp. 3163-3169 ◽  
Author(s):  
Jun Wang ◽  
Xiaomin Ren ◽  
Can Deng ◽  
Haiyang Hu ◽  
Yunrui He ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Low Threshold

Extremely Low Threshold Current Density in (111)-Oriented GaAs/AlGaAs Quantum Well Lasers

1987 ◽  
Author(s):  
Toshiro HAYAKAWA ◽  
Masafumi KONDO ◽  
Takahiro SUYAMA ◽  
Kosei TAKAHASHI ◽  
Saburo YAMAMOTO ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Low Threshold

scholarly journals Low-threshold current GaAsSb∕GaAs quantum well lasers grown by solid source molecular beam epitaxy

2002 ◽  
Vol 38 (22) ◽  
pp. 1354 ◽  
Author(s):  
Po-Wei Liu ◽  
Ming-Han Lee ◽  
Hao-Hsiung Lin ◽  
Jhe-Ren Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Low Threshold
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