A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers

1997 ◽  
Vol 9 (11) ◽  
pp. 1448-1450 ◽  
Author(s):  
T. Miyamoto ◽  
K. Takeuchi ◽  
F. Koyama ◽  
K. Iga
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Long Wavelength ◽  
Quantum Well Structure

Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers

1994 ◽  
Vol 30 (2) ◽  
pp. 477-499 ◽  
Author(s):  
P.J.A. Thiis ◽  
L.F. Tiemeijer ◽  
J.J.M. Binsma ◽  
T. Van Dongen
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Strained Layer ◽  
Long Wavelength

Optical blue shift in a double quantum-well structure induced by long-wavelength radiation

1990 ◽  
Author(s):  
Eduardo de Campos Valadares ◽  
Andre B. Henriques ◽  
L. M. R. Scolfaro ◽  
J. R. Leite
Keyword(s):  
Quantum Well ◽  
Blue Shift ◽  
Double Quantum ◽  
Long Wavelength ◽  
Quantum Well Structure ◽  
Double Quantum Well ◽  
Wavelength Radiation

scholarly journals High power semiconductor lasers with a quantum well structure.

1988 ◽  
Vol 16 (11) ◽  
pp. 758-766
Author(s):  
Takahiro SUYAMA ◽  
Masafumi KONDO ◽  
Masahiro HOSODA ◽  
Toshiro HAYAKAWA ◽  
Saburo YAMAMOTO ◽  
...  
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Power ◽  
Power Semiconductor ◽  
Quantum Well Structure

High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers

2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Frequency Operation
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