Long wavelength determination of a strained quantum well structure based on GaxIn1−x−yAsySb1−y /GaSb for gas detection

2011 ◽  
Author(s):  
A. Aissat ◽  
S. Nacer ◽  
H. Aliane ◽  
J. P. Vilcot
Keyword(s):  
Quantum Well ◽  
Gas Detection ◽  
Long Wavelength ◽  
Quantum Well Structure ◽  
Strained Quantum Well

Improvement of the Lifetime of a GaAs-Based Laser on Si with a Strained Quantum-Well Structure.

1994 ◽  
Vol 22 (12) ◽  
pp. 977-984
Author(s):  
Yoshiaki HASEGAWA ◽  
Takashi EGAWA ◽  
Takashi JIMBO ◽  
Masayoshi UMENO
Keyword(s):  
Quantum Well ◽  
Quantum Well Structure ◽  
Strained Quantum Well

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

High T0 (140 K) and low-threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates

1997 ◽  
Vol 33 (21) ◽  
pp. 1795 ◽  
Author(s):  
K. Otsubo ◽  
H. Shoji ◽  
T. Kusunoki ◽  
T. Suzuki ◽  
T. Uchida ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Long Wavelength ◽  
Low Threshold ◽  
Strained Quantum Well

A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers

1997 ◽  
Vol 9 (11) ◽  
pp. 1448-1450 ◽  
Author(s):  
T. Miyamoto ◽  
K. Takeuchi ◽  
F. Koyama ◽  
K. Iga
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Long Wavelength ◽  
Quantum Well Structure
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