Temperature sensitivity of strained multiple quantum well long-wavelength semiconductor lasers: root cause analysis and the effects of varying device structure

1997 ◽  
Author(s):  
John D. Evans ◽  
John G. Simmons ◽  
Toshi Makino
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Temperature Sensitivity ◽  
Multiple Quantum Well ◽  
Root Cause Analysis ◽  
Multiple Quantum ◽  
Device Structure ◽  
Cause Analysis ◽  
Long Wavelength ◽  
Root Cause

High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers

2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Frequency Operation

Effect of Leakage Current on Pulse-Width Characteristic in Q-Switched Two-Section AlGaAs Multiple-Quantum-Well Semiconductor Lasers

1999 ◽  
Vol 38 (Part 1, No. 6A) ◽  
pp. 3530-3534
Author(s):  
Mitsuaki Shimizu ◽  
Yoshihiro Suzuki ◽  
Seiji Mukai ◽  
Masanobu Watanabe ◽  
Toshifumi Hasama
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Leakage Current ◽  
Pulse Width ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Dependence of emission wavelength on cavity length and facet reflectivities in multiple quantum well semiconductor lasers

1989 ◽  
Vol 54 (22) ◽  
pp. 2174-2176 ◽  
Author(s):  
J. Z. Wilcox ◽  
S. Ou ◽  
J. J. Yang ◽  
M. Jansen ◽  
G. L. Peterson
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Cavity Length ◽  
Multiple Quantum Well ◽  
Emission Wavelength ◽  
Multiple Quantum
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