Polarization dependence of the response of micrometer and submicrometer InGaAs metal-semiconductor-metal photodetectors

1997 ◽  
Vol 9 (6) ◽  
pp. 809-811 ◽  
Author(s):  
E.H. Bottcher ◽  
E. Droge ◽  
D. Bimberg ◽  
A. Umbach ◽  
H. Engel ◽  
...  
Keyword(s):  
Polarization Dependence ◽  
Metal Semiconductor Metal

Polarization dependence of the temporal response of metal‐semiconductor‐metal photodetectors

1994 ◽  
Vol 65 (24) ◽  
pp. 3146-3148 ◽  
Author(s):  
J. J. Kuta ◽  
H. M. van Driel ◽  
D. Landheer ◽  
Y. Feng
Keyword(s):  
Polarization Dependence ◽  
Temporal Response ◽  
Metal Semiconductor Metal

CHARACTERIZATION OF AN AlGaAs/GaAs METAL-SEMICONDUCTOR-METAL PHOTODETECTOR

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-325-C4-328
Author(s):  
M. ZIRNGIBL ◽  
R. SACHOT ◽  
M. ILEGEMS
Keyword(s):  
Metal Semiconductor Metal

scholarly journals Designing the Hotspots Distribution by Anisotropic Growth

Molecules ◽  
2021 ◽  
Vol 26 (1) ◽  
pp. 187
Author(s):  
Tianshun Li ◽  
Renxian Gao ◽  
Xiaolong Zhang ◽  
Yongjun Zhang
Keyword(s):  
Au Nanoparticles ◽  
Fdtd Method ◽  
Polarization Dependence ◽  
Noble Metal Nanoparticles ◽  
Oblique Angle Deposition ◽  
Matlab Simulation ◽  
Different Shapes ◽  
Plasma Enhancement ◽  
Difference Time ◽  
Good Agreement

Changing the morphology of noble metal nanoparticles and polarization dependence of nanoparticles with different morphologies is an important part of further research on surface plasma enhancement. Therefore, we used the method based on Matlab simulation to provide a simple and effective method for preparing the morphologies of Au nanoparticles with different morphologies, and prepared the structure of Au nanoparticles with good uniformity and different morphologies by oblique angle deposition (OAD) technology. The change of the surface morphology of nanoparticles from spherical to square to diamond can be effectively controlled by changing the deposition angle. The finite difference time domain (FDTD) method was used to simulate the electromagnetic fields of Au nanoparticles with different morphologies to explore the polarization dependence of nanoparticles with different shapes, which was in good agreement with Raman spectrum.

CuO nanowire-based metal semiconductor metal infrared photodetector

2021 ◽  
Vol 127 (5) ◽  
Author(s):  
Menuvolu Tetseo ◽  
Prasenjit Deb ◽  
Sudem Daimary ◽  
Jay Chandra Dhar
Keyword(s):  
Infrared Photodetector ◽  
Metal Semiconductor Metal ◽  
Cuo Nanowire

Polarization-dependence of the Raman response of free-standing strained Ce0.8Gd0.2O2 membranes

2021 ◽  
Author(s):  
Alexander Konetschny ◽  
Marcel Weinhold ◽  
Christian Heiliger ◽  
Matthias Thomas Elm ◽  
Peter J. Klar
Keyword(s):  
Thin Films ◽  
Strain State ◽  
Polarization Dependence ◽  
Raman Mapping ◽  
Free Standing ◽  
Excitation Light ◽  
Oriented Polycrystalline ◽  
Raman Response

Square-shaped Ce0.8Gd0.2O2 (GDC) membranes are prepared by microstructuring techniques from (111)-oriented, polycrystalline GDC thin films. The strain state of the membranes is investigated by micro-Raman mapping using polarized excitation light....

scholarly journals Monolayer Twisted Graphene-Based Schottky Transistor

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4109
Author(s):  
Ramin Ahmadi ◽  
Mohammad Taghi Ahmadi ◽  
Seyed Saeid Rahimian Koloor ◽  
Michal Petrů
Keyword(s):  
Dispersion Relation ◽  
Quantum Tunneling ◽  
Research Study ◽  
Channel Length ◽  
New Class ◽  
Metal Semiconductor Metal ◽  
The Relationship ◽  
Graphene Structures ◽  
Twisted Graphene ◽  
Device Technology

The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal–semiconductor–metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the ID-VGS is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.

Perspective metal-semiconductor-metal (Mo/p-CdTe/Mo) structure for switching elements

2020 ◽  
Author(s):  
A.N. Drozdov ◽  
G.S. Khrypunov ◽  
V.O. Nikitin ◽  
A.V. Meriuts ◽  
M.G. Khrypunov ◽  
...  
Keyword(s):  
Metal Semiconductor Metal

Polarization dependence of the ultrafast photoluminescence of oriented poly(p-phenylenevinylene)

1997 ◽  
Vol 56 (7) ◽  
pp. 3838-3843 ◽  
Author(s):  
G. R. Hayes ◽  
I. D. W. Samuel ◽  
R. T. Phillips
Keyword(s):  
Polarization Dependence

Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors

2018 ◽  
Vol 123 (16) ◽  
pp. 161551 ◽  
Author(s):  
S. Walde ◽  
M. Brendel ◽  
U. Zeimer ◽  
F. Brunner ◽  
S. Hagedorn ◽  
...  
Keyword(s):  
Threading Dislocations ◽  
Metal Semiconductor Metal ◽  
Open Core

Plasmonic effect–enhanced Ag nanodisk incorporated ZnO/Si metal–semiconductor–metal photodetectors

2016 ◽  
Vol 6 (4) ◽  
pp. 042508 ◽  
Author(s):  
Manjeet Kumar ◽  
Hossein Shokri Kojori ◽  
Sung Jin Kim ◽  
Hyeong-Ho Park ◽  
Joondong Kim ◽  
...  
Keyword(s):  
Plasmonic Effect ◽  
Metal Semiconductor Metal
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