High-output-power (+15 dBm) unidirectional 1310-nm multiple-quantum-well booster amplifier module

1995 ◽  
Vol 7 (12) ◽  
pp. 1519-1521 ◽  
Author(s):  
L.F. Tiemeijer ◽  
P.J.A. Thijs ◽  
T. Van Dongen ◽  
J.J.M. Binsma ◽  
E.J. Jansen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Output Power ◽  
High Output

High Quantum Efficiency, High Output Power 1.3 µm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes

1989 ◽  
Vol 28 (Part 2, No. 4) ◽  
pp. L661-L663 ◽  
Author(s):  
Akihiko Kasukawa ◽  
Ian John Murgatroyd ◽  
Yoshihiro Imajo ◽  
Narihito Matsumoto ◽  
Toru Fukushima ◽  
...  
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
High Output Power ◽  
High Quantum Efficiency ◽  
Graded Index ◽  
High Output

MOCVD Growth of High Output Power Ingan Multiple Quantum Well Light Emitting Diode

1997 ◽  
Vol 468 ◽  
Author(s):  
P. Kozodoy ◽  
A. Abare ◽  
R. K. Sink ◽  
M. Mack ◽  
S. Keller ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Output Power ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
Peak Emission Wavelength ◽  
Mocvd Growth

ABSTRACTThe MOCVD growth of InGaN / GaN multiple quantum well (MQW) structures for optoelectronic applications has been investigated. The structural and optical properties of the layers have been characterized by x-ray diffraction and photoluminescence. The effect of barrier and well dimensions on the optical properties have been examined; highest emission intensity and narrowest linewidth were obtained with thin wells (20–30 Å) and thick barriers (greater than 50 Å). By incorporating an MQW structure as the active region in a GaN p-n diode, high-brightness light emitting diodes (LEDs) have been produced. Under a forward current of 20 raA, these devices emit 2.2 mW of power corresponding to an external quantum efficiency of 4.5%. The emission spectrum peaks at 445 nm and exhibits a narrow linewidth of 28 nm. Under pulsed high current conditions, output power as high as 53 mW was realized and the peak emission wavelength shifted to 430 nm.

Enhancement of the Optical Output Power of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes by a CoFe Ferromagnetic Layer

ACS Photonics ◽  
2015 ◽  
Vol 2 (11) ◽  
pp. 1519-1523 ◽  
Author(s):  
Jae-Joon Kim ◽  
Young-Chul Leem ◽  
Jang-Won Kang ◽  
Joonhyun Kwon ◽  
Beongki Cho ◽  
...  
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Ferromagnetic Layer ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Optical Output Power ◽  
Optical Output
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