High performance 1.5 mu m multiple-quantum-well DFB-DC-PBH-LDs at 30 mW output power for Gb/s range coherent systems

1991 ◽  
Vol 3 (4) ◽  
pp. 305-307 ◽  
Author(s):  
M. Kitamura ◽  
H. Yamazaki ◽  
T. Sasaki ◽  
N. Kida ◽  
I. Mito
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
High Performance ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Coherent Systems

scholarly journals A high-performance SiGe-Si multiple-quantum-well heterojunction phototransistor

2003 ◽  
Vol 24 (10) ◽  
pp. 643-645 ◽  
Author(s):  
Zingway Pei ◽  
C.S. Liang ◽  
L.S. Lai ◽  
Y.T. Tseng ◽  
Y.M. Hsu ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Multiple Quantum Well ◽  
Multiple Quantum

High-Performance Strain-Compensated Multiple Quantum Well Planar Buried Heterostructure Laser Diodes with Low Leakage Current

1996 ◽  
Vol 35 (Part 1, No. 3) ◽  
pp. 1751-1757 ◽  
Author(s):  
Ho Sung Cho ◽  
Dong Hoon Jang ◽  
Jung Kee Lee ◽  
Kyung Hyun Park ◽  
Jeong Soo Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Leakage Current ◽  
High Performance ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Low Leakage ◽  
Heterostructure Laser ◽  
Low Leakage Current ◽  
Buried Heterostructure

Sil−xGex/Si Multiple Quantum Well Wires Fabricated Using Selective Etching

1995 ◽  
Vol 379 ◽  
Author(s):  
Shi Yi ◽  
Wang Feng ◽  
Liu Jianlin ◽  
Zhang Rong ◽  
Gu Shulin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Chemical Etching ◽  
High Performance ◽  
Multiple Quantum Well ◽  
Liquid Nitrogen Temperature ◽  
Selective Etching ◽  
Multiple Quantum ◽  
Quantum Well Wires ◽  
Selective Chemical ◽  
Better Than

ABSTRACTUsing lithography, and selective etching the Si1-xGex/Si multiple quantum well wires are fabricated. The characteristics of the selective chemical etching of Si1-xGex and Si are investigated, and high-performance etchants are developed. The etchant composed of HF:NH4F:H202:NH4OH is used for the etching of the epitaxial Si1-xGex films, the selectivity is better than 250 for Si0.76Ge0.24, and increases with the increase of the mole fraction x of Ge. Another etchant composed of NH4NO3:NH4OH is used for the etching of Si, the selectivity is higher than 1000 ( x ≥ 0.1 ). A preliminary photoluminescence (PL) result obtained from the Si0.76Ge0.24 multiple quantum well wires is presented. As the linewidth of the wires is reduced down to 50 nm, an intense complicated PL spectrum in the wavelength range of 500∼800 nm is observed at liquid nitrogen temperature. The origin of such spectrum is unclear.

High Quantum Efficiency, High Output Power 1.3 µm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes

1989 ◽  
Vol 28 (Part 2, No. 4) ◽  
pp. L661-L663 ◽  
Author(s):  
Akihiko Kasukawa ◽  
Ian John Murgatroyd ◽  
Yoshihiro Imajo ◽  
Narihito Matsumoto ◽  
Toru Fukushima ◽  
...  
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
High Output Power ◽  
High Quantum Efficiency ◽  
Graded Index ◽  
High Output
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