Series resistance and its effect on the maximum output power of 1.5 μm strained-layer multiple-quantum-well ridge waveguide InGaAsP lasers

2000 ◽  
Vol 87 (1) ◽  
pp. 1-4 ◽  
Author(s):  
B. B. Elenkrig ◽  
S. Smetona ◽  
J. G. Simmons ◽  
B. Takasaki ◽  
J. D. Evans ◽  
...  
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Series Resistance ◽  
Maximum Output Power ◽  
Multiple Quantum Well ◽  
Ridge Waveguide ◽  
Multiple Quantum ◽  
Maximum Output ◽  
Strained Layer

High Power InAsSb/InAsSbP Laser Diodes Emitting at 3 ∼ 5 μm Range

1996 ◽  
Vol 450 ◽  
Author(s):  
M. Razeghi ◽  
J. Diaz ◽  
H. J. Yi ◽  
D. Wu ◽  
B. Lane ◽  
...  
Keyword(s):  
Active Region ◽  
Energy Gap ◽  
Maximum Output Power ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Maximum Output ◽  
Double Heterostructure

ABSTRACTWe report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70 % up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78 K were achieved from the double-heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the use of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.

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