Highly uniform GaAs/AlGaAs GRIN-SCH SQW diode lasers grown by organometallic vapor phase epitaxy

C.A. Wang; H.K. Choi; M.K. Connors

doi:10.1109/68.43378

Highly uniform GaAs/AlGaAs GRIN-SCH SQW diode lasers grown by organometallic vapor phase epitaxy

IEEE Photonics Technology Letters ◽

10.1109/68.43378 ◽

1989 ◽

Vol 1 (11) ◽

pp. 351-353 ◽

Cited By ~ 4

Author(s):

C.A. Wang ◽

H.K. Choi ◽

M.K. Connors

Keyword(s):

Vapor Phase ◽

Diode Lasers ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Highly Uniform

Download Full-text

3-μ InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy

10.1117/12.59134 ◽

1992 ◽

Author(s):

Raymond J. Menna ◽

David R. Capewell ◽

Ramon U. Martinelli ◽

Pamela K. York ◽

Ronald E. Enstrom

Keyword(s):

Vapor Phase ◽

Diode Lasers ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

Download Full-text

3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor‐phase epitaxy

Applied Physics Letters ◽

10.1063/1.106101 ◽

1991 ◽

Vol 59 (17) ◽

pp. 2127-2129 ◽

Cited By ~ 47

Author(s):

R. J. Menna ◽

D. R. Capewell ◽

Ramon U. Martinelli ◽

P. K. York ◽

R. E. Enstrom

Keyword(s):

Vapor Phase ◽

Diode Lasers ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

Download Full-text

GaInAsSb/AlGaAsSb diode lasers grown by organometallic vapor phase epitaxy

10.1117/12.273802 ◽

1997 ◽

Author(s):

Christine A. Wang ◽

Hong K. Choi

Keyword(s):

Vapor Phase ◽

Diode Lasers ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

Download Full-text

GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.118227 ◽

1997 ◽

Vol 70 (7) ◽

pp. 802-804 ◽

Cited By ~ 27

Author(s):

C. A. Wang ◽

H. K. Choi

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Diode Lasers ◽

Multiple Quantum Well ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Organometallic Vapor Phase Epitaxy

Download Full-text

AlInGaAs/AlGaAs separate‐confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.104928 ◽

1991 ◽

Vol 58 (20) ◽

pp. 2208-2210 ◽

Cited By ~ 26

Author(s):

C. A. Wang ◽

J. N. Walpole ◽

L. J. Missaggia ◽

J. P. Donnelly ◽

H. K. Choi

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Diode Lasers ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Single Quantum ◽

Single Quantum Well

Download Full-text

Organometallic vapor phase epitaxy of high-performance strained-layer InGaAs-AlGaAs diode lasers

IEEE Journal of Quantum Electronics ◽

10.1109/3.81377 ◽

1991 ◽

Vol 27 (3) ◽

pp. 681-686 ◽

Cited By ~ 32

Author(s):

C.A. Wang ◽

H.K. Choi

Keyword(s):

Vapor Phase ◽

High Performance ◽

Diode Lasers ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Strained Layer

Download Full-text

Novel Precursors for Organometallic Vapor Phase Epitaxy

10.21236/ada251340 ◽

1992 ◽

Author(s):

G. B. Stringfellow

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

Download Full-text

Ultrahigh mobility two‐dimensional electron gas in AlxGa1−xAs/GaAs heterostructures by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.110614 ◽

1993 ◽

Vol 63 (14) ◽

pp. 1960-1962 ◽

Cited By ~ 3

Author(s):

Ricardo Basco ◽

Farid Agahi ◽

Kei May Lau

Keyword(s):

Vapor Phase ◽

Electron Gas ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas

Download Full-text

Strong photoluminescence from AlP/GaP disordered superlattice grown by atmospheric pressure organometallic vapor phase epitaxy using tertiarybutylphosphine

Applied Physics Letters ◽

10.1063/1.108556 ◽

1993 ◽

Vol 62 (8) ◽

pp. 888-890 ◽

Cited By ~ 27

Author(s):

Xue‐Lun Wang ◽

Akihiro Wakahara ◽

Akio Sasaki

Keyword(s):

Vapor Phase ◽

Atmospheric Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

Download Full-text

Luminescence properties of Er,O-codoped III–V semiconductors grown by organometallic vapor phase epitaxy

Physica B Condensed Matter ◽

10.1016/s0921-4526(99)00645-6 ◽

1999 ◽

Vol 273-274 ◽

pp. 770-773 ◽

Cited By ~ 32

Author(s):

Y Fujiwara ◽

T Kawamoto ◽

T Koide ◽

Y Takeda

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Luminescence Properties ◽

Organometallic Vapor Phase Epitaxy

Download Full-text