AlInGaAs/AlGaAs separate‐confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy

1991 ◽  
Vol 58 (20) ◽  
pp. 2208-2210 ◽  
Author(s):  
C. A. Wang ◽  
J. N. Walpole ◽  
L. J. Missaggia ◽  
J. P. Donnelly ◽  
H. K. Choi
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Diode Lasers ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Single Quantum ◽  
Single Quantum Well

Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1961-1965 ◽  
Author(s):  
Akihiko Ishibashi ◽  
Hidemi Takeishi ◽  
Nobuyuki Uemura ◽  
Masahiro Kume ◽  
Yasufumi Yabuuchi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Quantum Well Structure

Low-Temperature Metal-Organic Vapor-Phase Epitaxy Growth and Performance of 1.3-µm GaInNAs/GaAs Single Quantum Well Lasers

2002 ◽  
Vol 41 (Part 1, No. 2B) ◽  
pp. 1040-1042 ◽  
Author(s):  
Glenn-Yves Plaine ◽  
Carl Asplund ◽  
Petrus Sundgren ◽  
Sebastian Mogg ◽  
Mattias Hammar
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Organic Vapor ◽  
Metal Organic ◽  
And Performance

3-μ InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy

1992 ◽  
Author(s):  
Raymond J. Menna ◽  
David R. Capewell ◽  
Ramon U. Martinelli ◽  
Pamela K. York ◽  
Ronald E. Enstrom
Keyword(s):  
Vapor Phase ◽  
Diode Lasers ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

GaInAsP/InP ORGANOMETALLIC VAPOR PHASE EPITAXY FOR RESEARCH AND FABRICATION OF DEVICES

1990 ◽  
Vol 01 (03n04) ◽  
pp. 347-367 ◽  
Author(s):  
KAZUHITO FURUYA ◽  
YASUYUKI MIYAMOTO
Keyword(s):  
Quantum Well ◽  
Single Crystal ◽  
Vapor Phase ◽  
Optical Communication ◽  
Ballistic Transport ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Technique

GaInAsP/InP organometallic vapor phase epitaxy (OMVPE) is widely used for the fabrication of lasers and detectors used in optical communication. Here we describe the apparatus and growth technique of OMVPE and point out important growth conditions to obtain device quality single-crystal materials. Our research includes the use of OMVPE for the study of quantum-well lasers, ballistic-transport electron devices and nanometer heterostructures.

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