GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy

C. A. Wang; H. K. Choi

doi:10.1063/1.118227

GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.118227 ◽

1997 ◽

Vol 70 (7) ◽

pp. 802-804 ◽

Cited By ~ 27

Author(s):

C. A. Wang ◽

H. K. Choi

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Diode Lasers ◽

Multiple Quantum Well ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Organometallic Vapor Phase Epitaxy

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Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy

Journal of Luminescence ◽

10.1016/j.jlumin.2014.09.036 ◽

2015 ◽

Vol 158 ◽

pp. 70-74 ◽

Cited By ~ 17

Author(s):

Takanori Arai ◽

Dolf Timmerman ◽

Ryuta Wakamatsu ◽

Dong-gun Lee ◽

Atsushi Koizumi ◽

...

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Organometallic Vapor Phase Epitaxy ◽

Quantum Well Structures ◽

Excitation Efficiency

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Er-related luminescence in Er,O-codoped InGaAs/GaAs multiple-quantum-well structures grown by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.1456971 ◽

2002 ◽

Vol 80 (9) ◽

pp. 1559-1561 ◽

Cited By ~ 20

Author(s):

A. Koizumi ◽

H. Moriya ◽

N. Watanabe ◽

Y. Nonogaki ◽

Y. Fujiwara ◽

...

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Organometallic Vapor Phase Epitaxy ◽

Quantum Well Structures

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Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.106565 ◽

1992 ◽

Vol 60 (5) ◽

pp. 598-600 ◽

Cited By ~ 4

Author(s):

W. S. Hobson ◽

M. C. Wu ◽

Y. K. Chen ◽

M. A. Chin ◽

M. Geva ◽

...

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Organometallic Vapor Phase Epitaxy ◽

Quantum Well Laser ◽

Multiple Quantum Well Laser

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Long‐lived GaAlAs laser diodes with multiple quantum well active layers grown by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.94301 ◽

1983 ◽

Vol 43 (3) ◽

pp. 278-280 ◽

Cited By ~ 12

Author(s):

C. Lindström ◽

T. L. Paoli ◽

R. D. Burnham ◽

D. R. Scifres ◽

W. Streifer

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Organometallic Vapor Phase Epitaxy ◽

Active Layers

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Prediction method for the bandgap profiles of InGaAsP multiple quantum well structures fabricated by selective area metal-organic vapor phase epitaxy

International Conference on Indium Phosphide and Related Materials, 2005. ◽

10.1109/iciprm.2005.1517532 ◽

2005 ◽

Author(s):

T. Shioda ◽

M. Sugiyama ◽

Y. Shimogaki ◽

Y. Nakano

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Prediction Method ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Organic Vapor ◽

Selective Area ◽

Metal Organic

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Effects of Background Zn Doping on the Performance of InGaAs/GaAsP Multiple Quantum Well Solar Cells Grown by a Planetary Metal Organic Vapor Phase Epitaxy Reactor

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.10nd15 ◽

2012 ◽

Vol 51 ◽

pp. 10ND15

Author(s):

Hassanet Sodabanlu ◽

Shaojun Ma ◽

Kentaroh Watanabe ◽

Masakazu Sugiyama ◽

Yoshiaki Nakano

Keyword(s):

Solar Cells ◽

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Zn Doping ◽

Organic Vapor ◽

Metal Organic

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2.1-µm Wavelength Strained InGaAs Multiple-Quantum-Well Lasers Grown by Metalorganic Vapor Phase Epitaxy assisted by Sb Surfactant

2005 Pacific Rim Conference on Lasers & Electro-Optics ◽

10.1109/cleopr.2005.1569530 ◽

2006 ◽

Author(s):

T. Sato ◽

M. Mitsuhara ◽

T. Watanabe ◽

K. Kasaya ◽

Y. Kondo

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Lasers ◽

Multiple Quantum

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Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.08jl10 ◽

2013 ◽

Vol 52 (8S) ◽

pp. 08JL10 ◽

Cited By ~ 3

Author(s):

Liyang Zhang ◽

Ruben R. Lieten ◽

Magdalena Latkowska ◽

Michał Baranowski ◽

Robert Kudrawiec ◽

...

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Optical Characterization ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Organic Vapor ◽

Metal Organic

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Comparison of blue and green InGaN∕GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.1866634 ◽

2005 ◽

Vol 86 (10) ◽

pp. 101903 ◽

Cited By ~ 63

Author(s):

Y. D. Qi ◽

H. Liang ◽

D. Wang ◽

Z. D. Lu ◽

W. Tang ◽

...

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Light Emitting Diodes ◽

Multiple Quantum Well ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Light Emitting

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Effects of Background Zn Doping on the Performance of InGaAs/GaAsP Multiple Quantum Well Solar Cells Grown by a Planetary Metal Organic Vapor Phase Epitaxy Reactor

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.10nd15 ◽

2012 ◽

Vol 51 (10S) ◽

pp. 10ND15 ◽

Cited By ~ 1

Author(s):

Hassanet Sodabanlu ◽

Shaojun Ma ◽

Kentaroh Watanabe ◽

Masakazu Sugiyama ◽

Yoshiaki Nakano

Keyword(s):

Solar Cells ◽

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Zn Doping ◽

Organic Vapor ◽

Metal Organic

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